Method for manufacturing fin-shaped structures with carbon nano tube as mask

Abstract

The invention provides a method for manufacturing fin-shaped structures with a carbon nano tube as a mask. The method includes the steps that a semi-conductor substrate is provided; a media layer is formed on the semi-conductor substrate, and one-dimensional carbon nano tube array structures are arrayed on the media layer in parallel; the carbon nano tube array structures in parallel are used as a mask layer, and groove array structures are formed in the media layer; the groove array structures are filled with hard mask materials and are grinded until the tops of the hard mask materials are flush with the surface of the media layer so that hard mask patterns can be formed; with the hard mask patterns as templates, the media layer and the semi-conductor substrate are sequentially etched through an etching technology, and the fin-shaped structures are formed in the semi-conductor substrate. The width of the fin-shaped structure can be effectively controlled, and small-size fin-shaped structures can be manufactured, so that technological difficulty is reduced, and performance modulation for the components is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a fin structure by using carbon nanotubes as a mask. Background technique [0002] With the continuous shrinking of semiconductor process technology nodes, traditional planar MOSFETs have encountered more and more technical challenges. FinFETs, as a new type of three-dimensional device structure, can greatly improve the device characteristics of MOSFETs, including suppressing short channel effects, reducing Small device leakage, increased drive current, improved sub-threshold characteristics, etc. At present, FinFET has become a new device structure recognized by the industry that can continue the trend of reducing the size of silicon-based MOSFETs, and will be mass-produced at process nodes below 20 nanometers. [0003] The three-dimensional silicon fin structure (Si Fin) is one of the key processes to realize the fabrication of FinFET devices, but...

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Problems solved by technology

[0004] As a new type of one-dimensional nanomaterial, carbon nanotubes can be potentially applied in the field of preparation and processing of nanostructures due to their unique material properties. Studies have shown that small-sized SiO2 trenches can be prepared by using carbon nanotubes as mask materials. Structure (Hye R., et.al., Nature Nanotechnol., vol.2, pp.267, 2008; Liu H.T., et.al., J.Am.Chem.Soc., vol.131, pp.17034, 2009; Zhao H.B., et.al., Chin.Phys.B, vol.20, pp.108103, 2011), however, there is currently a lack of technology to combine carbon nanotube masks and FinFETs, how to combine the two To prepare high-performance FinFET devices has become a problem to be solved. Among them, how to use carbon nanotubes to prepare fin-shaped structures has become a key technology. Therefore, it is of great significance to study the process of using carbon nanotubes to prepare fin-shaped structures.

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