Compound semiconductor layer and method of manufacturing the same
A semiconductor and compound technology, which is applied in the field of compound semiconductor devices and its manufacturing, and can solve problems such as ohmic electrode breakdown
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no. 1 approach
[0026] In the present embodiment, an AlGaN / GaN HEMT of a nitride semiconductor is disclosed as a compound semiconductor device.
[0027] Figure 1A to Figure 3C A schematic cross-sectional view of the method of manufacturing the AlGaN / GaN HEMT according to the first embodiment is shown in order of steps.
[0028] First, if Figure 1A As shown, a compound semiconductor stack structure 2 is formed on, for example, a semi-insulating SiC substrate 1 as a growth substrate. As the growth substrate, instead of the SiC substrate, a Si substrate, a sapphire substrate, a GaAs substrate, a GaN substrate, or the like can be used. The conductivity of the substrate can be semi-insulating or conducting.
[0029] The compound semiconductor stack structure 2 includes a buffer layer 2a, an electron transit layer 2b, an intermediate layer 2c, an electron supply layer 2d, and a cap layer 2e.
[0030] A two-dimensional electron gas (2DEG) as transit electrons is generated in the vicinity of th...
no. 2 approach
[0075] In this embodiment, as in the first embodiment, the structure and manufacturing method of the AlGaN / GaN HEMT are disclosed, but the formation of the Al-Si-N layer is different from the Al-Si-N layer in the first embodiment Formation. Note that the same constituent members and the like as those in the first embodiment will be denoted by the same reference numerals, and a detailed description thereof will be omitted.
[0076] Figure 7A to Figure 7C and Figure 8A to Figure 8C is a schematic cross-sectional view showing main steps of the method of manufacturing an AlGaN / GaN HEMT according to the second embodiment.
[0077] In this embodiment, as in the first embodiment, first execute Figure 1A to Figure 2A in the steps. At this time, source electrode 4 and drain electrode 5 are formed such that a part of their side surfaces facing each other contacts silicon nitride film 3 . Figure 7A The state at this time is shown in .
[0078] Subsequently, if Figure 7B As sh...
no. 3 approach
[0101] In this embodiment, as in the first embodiment, the structure and manufacturing method of the AlGaN / GaN HEMT are disclosed, but the formation of the high resistance layer is different from that in the first embodiment. Note that the same constituent members and the like as those in the first embodiment will be denoted by the same reference numerals, and a detailed description thereof will be omitted.
[0102] Figure 10A to Figure 10C and Figure 11A to Figure 11C is a schematic cross-sectional view showing main steps of the method of manufacturing an AlGaN / GaN HEMT according to the third embodiment.
[0103] In this embodiment, as in the first embodiment, first execute Figure 1A in the steps. At this time, a compound semiconductor stack structure 2 having a buffer layer 2 a, an electron transit layer 2 b, an intermediate layer 2 c, an electron supply layer 2 d, and a cap layer 2 e is formed on the SiC substrate 1 . Figure 10A The state at this time is shown in . ...
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