Radiation detection device based on soi CMOS process and its preparation method

Abstract

The invention provides an SOI CMOS technology-based radiation detector and a preparation method thereof. A Si film area, a source electrode or drain electrode injection area and a medium isolation area are arranged on an oxygen-buried oxidation layer in sequence from inside to outside, a body area injection area is embedded in the Si film area, and ohmic contact electrodes are arranged on the source electrode or drain electrode injection area and the body area injection area; and a Si substrate is arranged under the oxygen-buried oxidation layer, a groove with the bottom facing upwards is arranged on the Si substrate, a back gate electrode is arranged on the surface of the groove, and a back through hole metal filling area connected with the back gate electrode is arranged inside the oxygen-buried oxidation layer. The device has high radiation sensitivity, high induced charge capacity, low working gate voltage, and high reliability. The medium isolation area grows on a front side of a substrate; the source electrode or drain electrode injection area and the body area injection area are obtained by injecting ions; the ohmic contact electrodes are obtained by sputter deposition; and a detection window area and the back through hole area are etched on the reverse side of the substrate and are filled with metal. The method is simple in technology, good in repeatability, and low in cost, and is easy to be integrated with the manufacturing technology of an existing large scale integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to semiconductor devices, in particular to a radiation detection device based on SOICMOS technology and a preparation method thereof. Background technique [0002] Radiation detectors are mainly used to measure various radiation environmental particles, such as photons, neutrons, alpha particles, beta particles and high-energy ions. Therefore, it has a wide range of applications in nuclear physics, medical treatment, biomedical occasions, and aerospace satellite detection and other fields. For example, in the field of space applications, it is necessary to measure the metering rate of particles in the space environment in real time, so as to ensure the normal operation of electronic equipment. [0003] MOS device radiation dosimeters refer to dosimeters made of semiconductor materials. Under radiation conditions, the gate oxide dielectric region of the device will generate i...

AI Technical Summary

Problems solved by technology

The main problems of this type of RADFET device are as follows: 1) Due to the use of bulk silicon technology, the single event effect is not effectively isolated; 2) In order to suppress the degradation of the threshold voltage of the RADFET device after radiation, generally thicker The gate oxide thickness is too high, which causes the working voltage of the RADFET device to be too high; 3) The existing RADFET devices generally use SiO 2 (SiON) structure gate dielectric, which makes the sensitivity response low; 4) The working time of the existing RADFET device is short, which cannot meet the long-term recording of radiation information data; 5) Lack of protection devices, in the sudden high In a radiation environment, it is easy to cause burnout of MOS dose rate devices

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