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83results about How to "Increased radiation sensitivity" patented technology

TRPM-2 antisense therapy

It has now been determined that antisense therapy which reduces the expression of TRPM-2 provides therapeutic benefits in the treatment of cancer. In particular, such antisense therapy can be applied in treatment of prostate cancer and renal cell cancer. Addition of antisense TRPM-2 ODN to prostatic tumor cells in vivo is effective for delaying the onset of androgen independence. Thus, prostate cancer can be treated in an individual suffering from prostate cancer by initiating androgen-withdrawal to induce apoptotic cell death of prostatic tumor cells in the individual, and administering to the individual a composition effective to inhibit expression of TRPM-2 by the tumor cells, thereby delaying the progression of prostatic tumor cells to an androgen-independent state in an individual Combined use of antisense TRPM-2 and taxanes synergistically enhances cytotoxic chemosensitivity of androgen-independent prostate cancer. In addition, it has also been found that antisense TRPM-2 has beneficial effect for other cancer types. Specifically, antisense TRPM-2 ODN enhances chemosensitivity in human Renal cell cancer, a normally chemoresistant disease with no active chemotherapeutic agent having an objective response rate higher than 10%. Radiation sensitivity is also enhanced when cells expressing TRPM-2 are treated with antisense TRPM-2 ODN. Thus, the antisense TRPM-2 ODNs can be used to enhance hormone sensitivity, chemosensitivity and radiation sensitivity of a variety of cancer types in which expression of TRPM-2 has been observed.
Owner:THE UNIV OF BRITISH COLUMBIA

Active Energy Radiation Ray Gel-type Resin Composition, Coloring Spacer And/or Black Matrix For Display Element Using Active Energy Radiation Ray Gel-type Resin Composition

The invention relates to active radiation hardenable resin composition, and a spacer and/or a color filter protective layer for a display element using the same. The objective of the invention lies in providing the spacer and the color filter protective layer for the display element, wherein the spacer or the protective layer is good in heat resistant transparency, flatness, flexibility, and tenacity. The active radiation hardenable resin composition for spacer or the protective layer contains a reactive polybasic carboxylic acid compound (A), a reactive compound (B) different from the reactive polybasic carboxylic acid compound (A), a photopolymerization initiator (C), and an organic solvent (D). The reactive polybasic carboxylic acid compound (A) enables the reaction products of epoxy resin with a compound (B) and a compound (C) to further react with polybasic anhydride (D) to obtain the reactive polybasic carboxylic acid compound (A), wherein one molecule of the reactive polybasic carboxylic acid compound (A) at least contains two or more epoxy groups, one molecule of the compound (B) contains one or more polymerizable olefinic unsaturated groups and one or more carboxy groups, and one molecule of the compound (C) at least contains two or more hydroxide radicals and one or more carboxy groups.
Owner:NIPPON KAYAKU CO LTD

Capacitance Si-based radiation detecting device, and preparation method thereof

ActiveCN103700719APerformance parameter impactHigh sensitivitySemiconductor devicesCapacitanceEtching
The invention provides a capacitance Si-based radiation detecting device, and a preparation method thereof. The detecting device comprises an Si substrate layer, wherein a buried oxide layer is set above the Si substrate layer; a metal fill area, a gate dielectric area, a Si thin layer, an ohmic contact injection area and an oxide isolation layer are set on the buried oxide layer from the center to the periphery; an ohmic contact area is set above the ohmic contact injection area; a gate metal electrode is set above the metal fill area. The detector has the advantages of high radiation sensitivity and induced charge capacity, low work gate voltage and high reliability. The method comprises the steps of growing the oxide isolation layer on a substrate; forming the ohmic contact injection area by doping light and heavy ions; forming the ohmic contact area via sputter deposition; forming a groove area via etching; forming the gate dielectric area via an atomic layer deposition process; forming a metal fill groove area via secondary etching; forming the metal fill area and the gate metal electrode via the Cu interconnection process. The method has the advantages of simpleness in process, good repeatability, low cost and easiness in integration with the fabrication process of the existing large-scale integrated circuit.
Owner:NO 771 INST OF NO 9 RES INST CHINA AEROSPACE SCI & TECH

SOI CMOS technology-based radiation detector and preparation method thereof

ActiveCN103715293AInhibit the impact of performance parametersReduce volumeSemiconductor devicesIonSputter deposition
The invention provides an SOI CMOS technology-based radiation detector and a preparation method thereof. A Si film area, a source electrode or drain electrode injection area and a medium isolation area are arranged on an oxygen-buried oxidation layer in sequence from inside to outside, a body area injection area is embedded in the Si film area, and ohmic contact electrodes are arranged on the source electrode or drain electrode injection area and the body area injection area; and a Si substrate is arranged under the oxygen-buried oxidation layer, a groove with the bottom facing upwards is arranged on the Si substrate, a back gate electrode is arranged on the surface of the groove, and a back through hole metal filling area connected with the back gate electrode is arranged inside the oxygen-buried oxidation layer. The device has high radiation sensitivity, high induced charge capacity, low working gate voltage, and high reliability. The medium isolation area grows on a front side of a substrate; the source electrode or drain electrode injection area and the body area injection area are obtained by injecting ions; the ohmic contact electrodes are obtained by sputter deposition; and a detection window area and the back through hole area are etched on the reverse side of the substrate and are filled with metal. The method is simple in technology, good in repeatability, and low in cost, and is easy to be integrated with the manufacturing technology of an existing large scale integrated circuit.
Owner:NO 771 INST OF NO 9 RES INST CHINA AEROSPACE SCI & TECH
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