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Radiation sensitive resin composition, interlayer dielectric, and method for producing thereof

A resin composition, radiation technology, applied in photosensitive material processing, patterned surface photoengraving process, photosensitive material used in optomechanical equipment, etc., to achieve high radiation sensitivity, excellent coatability, good pattern shape. Effect

Active Publication Date: 2011-06-08
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no radiation-sensitive resin composition that fully meets such requirements

Method used

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  • Radiation sensitive resin composition, interlayer dielectric, and method for producing thereof
  • Radiation sensitive resin composition, interlayer dielectric, and method for producing thereof
  • Radiation sensitive resin composition, interlayer dielectric, and method for producing thereof

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0178] Synthesis of Copolymer [A-1]

[0179] In a flask equipped with a cooling tube and a stirrer, 7 parts by mass of 2,2'-azobis-(2,4-dimethylvaleronitrile) and 200 parts by mass of diethylene glycol ethyl methyl ether were added. Then, add 12 parts by mass of methacrylic acid, 50 parts by mass of glycidyl methacrylate, 4 parts by mass of N-cyclohexylmaleimide, 15 parts by mass of tetrahydrofurfuryl methacrylate, 10 parts by mass of 3- (2-Methacryloyloxyethyl) oxetane, 3 parts by mass of styrene and 2 parts by mass of pentaerythritol tetrakis (3-mercaptopropionate), after nitrogen replacement, start to slowly stir. The temperature of the solution rose to 70°C, and polymerization started when the temperature of the reaction solution reached 70°C. Then, 3 parts by mass of N-cyclohexylmaleimide was added dropwise to the reaction solution 30 minutes after the start of the polymerization, and 3 parts by mass of N-cyclohexylmaleimide was added dropwise thereafter 1 hour later. T...

Synthetic example 2

[0181] Synthesis of Copolymer [A-2]

[0182] 7 parts by mass of 2,2'-azobis-(2,4-dimethylvaleronitrile) and 200 parts by mass of diethylene glycol ethyl methyl ether were added to a flask equipped with a cooling tube and a stirrer. Then, add 12 parts by mass of methacrylic acid, 50 parts by mass of glycidyl methacrylate, 4 parts by mass of N-cyclohexylmaleimide, 15 parts by mass of tetrahydrofurfuryl methacrylate, 8 parts by mass of 3- (2-methacryloyloxyethyl) oxetane, 5 parts by mass of 4-hydroxybenzyl methacrylate and 2 parts by mass of pentaerythritol tetrakis (3-mercaptopropionate), after nitrogen replacement, start Stir slowly. The temperature of the solution rose to 70°C, and polymerization started when the temperature of the reaction solution reached 70°C. Then, 3 parts by mass of N-cyclohexylmaleimide was added dropwise to the reaction solution 30 minutes after the start of the polymerization, and 3 parts by mass of N-cyclohexylmaleimide was added dropwise thereafter...

Synthetic example 3

[0184] Synthesis of Copolymer [A-3]

[0185] In a flask equipped with a cooling tube and a stirrer, 7 parts by mass of 2,2'-azobis-(2,4-dimethylvaleronitrile) and 200 parts by mass of diethylene glycol ethyl methyl ether were added. Then, add 12 parts by mass of methacrylic acid, 50 parts by mass of glycidyl methacrylate, 4 parts by mass of N-cyclohexylmaleimide, 15 parts by mass of tetrahydrofurfuryl methacrylate, 8 parts by mass of 3- (2-Methacryloyloxyethyl) oxetane, 5 parts by mass of acryloylmorpholine and 2 parts by mass of pentaerythritol tetrakis(3-mercaptopropionate), after replacing with nitrogen, start to slowly stir. The temperature of the solution rose to 70°C, and polymerization started when the temperature of the reaction solution reached 70°C. Then, 3 parts by mass of N-cyclohexylmaleimide was added dropwise to the reaction solution 30 minutes after the start of the polymerization, and 3 parts by mass of N-cyclohexylmaleimide was added dropwise thereafter 1 ho...

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Abstract

The invention relates to a radiation-sensitive resin composition, an interlayer dielectric, and a method for producing thereof. More particular, the invention provides a positively radiation-sensitive resin composition which can form an interlayer dielectric, an interlayer dielectric formed by composition and the method of forming the interlayer dielectric. In addition to excellent coating performance, radiation sensitiveness and easy obtainablility of beautiful patterns, the interlayer dielectric also has excellent heat-resistant, anti-solvent and dry-corrosion-proof properties and high light transmitting rate. The radiation-sensitive resin composition is a positively radiation-sensitive resin composition containing (A) a soluble resin, (B) 1, 2-quinone diazide compound and (C) a compound represented by the formula (1).

Description

technical field [0001] The present invention relates to a positive radiation-sensitive resin composition suitable for use as a material for forming an interlayer insulating film such as a liquid crystal display element (LCD), an interlayer insulating film formed from the composition, and formation of the interlayer insulating film method. Background technique [0002] In electronic components such as thin film transistor (hereinafter referred to as "TFT") liquid crystal display elements, magnetic head elements, integrated circuit elements, and image sensors, an interlayer insulating film is generally provided between wirings arranged in layers for insulation. As a material for forming an interlayer insulating film, it is preferable to use a material having sufficient planarity with a small number of steps to obtain a necessary pattern shape, and thus a positive radiation-sensitive resin composition is widely used (see Patent Document 1). [0003] Among the above-mentioned e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/012G03F7/039G03F7/00G03F7/004
CPCG03F7/022G03F7/023G03F7/033G03F7/11G03F7/40H01L27/1248
Inventor 大沼友希荒井雅史松冈比登美花村政晓
Owner JSR CORPORATIOON
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