Polycrystalline gallium arsenide synthetic method without liquid encapsulation

A synthesis method and technology of gallium arsenide, applied in the field of synthesis of gallium arsenide polycrystalline, can solve the problems of low yield and poor crystallinity of gallium arsenide polycrystalline

Inactive Publication Date: 2014-04-16
QINGDAO SHENGJIA INFORMATION TECH
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the development and progress of science and technology, semiconductor materials are more and more used in optoelectronic devices, such as gallium arsenide polycrystalline and other materials, and materials such as gallium arsenide polycrystalline need to be synthesized. Currently, the existing gallium arsenide polycrystalline There are many defects and inconveniences in the synthesis process, and the synthesized gallium arsenide polycrystal has poor crystallinity and low yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The gallium arsenide polycrystalline liquid-free sealing synthesis method includes the following steps:

[0014] Step 1. Put the boron nitride crucible loaded with arsenic and gallium into the graphite crucible, and then cover the graphite crucible cover and graphite insulation cover in sequence;

[0015] Step 2, close the synthesis furnace body, vacuumize until the pressure in the synthesis furnace body is below 5Pa, and close the vacuum valve;

[0016] Step 3. Slowly fill in inert gas or nitrogen until the pressure in the synthesis furnace is 1.5MPa, open the furnace to cool the circulating water, and then increase the temperature to the melting temperature of the raw materials through five stages of temperature rise;

[0017] Step 4. Keep the melting temperature of the raw material at a constant temperature for 30 minutes, and when the pressure in the furnace body is gradually reduced to 0.5 MPa, rotate and lower the graphite crucible to realize the crystallization o...

Embodiment 2

[0022] The gallium arsenide polycrystalline liquid-free sealing synthesis method includes the following steps:

[0023] Step 1. Put the boron nitride crucible loaded with arsenic and gallium into the graphite crucible, and then cover the graphite crucible cover and graphite insulation cover in sequence;

[0024] Step 2, close the synthesis furnace body, vacuumize until the pressure in the synthesis furnace body is below 20Pa, and close the vacuum valve;

[0025] Step 3. Slowly fill in inert gas or nitrogen until the pressure in the synthesis furnace body is 4.5MPa, open the furnace body to cool the circulating water, and then rise to the melting temperature of the raw materials through five staged temperature rises;

[0026] Step 4. Keep the melting temperature of the raw material at a constant temperature for 60 minutes, and when the pressure in the furnace body is gradually reduced to 1.0 MPa, rotate and lower the graphite crucible to realize the crystallization of the galli...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a polycrystalline gallium arsenide synthetic method without liquid encapsulation. The method comprises the steps as follows: step one, a boron nitride crucible loaded with arsenic and gallium is placed in a graphite crucible, and then the graphite crucible is covered with a graphite crucible cover and a thermal-insulation graphite cover sequentially; step two, a synthesis furnace is turned off, vacuum pumping is performed until the pressure in the synthesis furnace is below 5-20 MPa, and a vacuum valve is turned off; step three, the furnace is slowly filled with inert gases or nitrogen, the furnace is opened for circulating water cooling until the pressure in the synthesis furnace is 1.5-4.5 MPa, and then the furnace is heated in five stages to reach a raw material melting temperature; step four, crystallization is performed; step five, when the temperature of the synthesis furnace is 600-800 DEG C after cooling in three stages, a heater is turned off, and meanwhile, the rotation of the graphite crucible is stopped to enable the synthesis furnace to cool naturally.

Description

technical field [0001] The invention relates to a synthesis method of gallium arsenide polycrystal, in particular to a liquid-free sealing synthesis method of gallium arsenide polycrystal. Background technique [0002] With the development and progress of science and technology, semiconductor materials are more and more used in optoelectronic devices, such as gallium arsenide polycrystalline and other materials, and materials such as gallium arsenide polycrystalline need to be synthesized. Currently, the existing gallium arsenide polycrystalline There are many defects and inconveniences in the synthesis process, and the crystallinity of the synthesized gallium arsenide polycrystal is not good and the yield is low. Therefore, finding a synthetic method for liquid-free sealing that can avoid the above defects has become the most urgent need at present. Contents of the invention [0003] The invention provides a method for synthesizing gallium arsenide polycrystalline liquid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B28/06C30B29/42
Inventor 胡美玉
Owner QINGDAO SHENGJIA INFORMATION TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap