Semiconductor element and method for manufacturing semiconductor element
A manufacturing method, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as difficulties, achieve efficient manufacturing, suppress mutual diffusion, and suppress the effect of increasing interface resistance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0082] On the surface of the single crystal silicon substrate (plane direction 100 ) serving as the semiconductor region, an aluminum alloy film containing 0.5 atomic % of germanium was formed by magnetron sputtering. Next, heat treatment was performed at 500° C. for 20 minutes in an atmosphere of an inert gas (N 2 ). In this way, a diffusion prevention layer was formed between the silicon substrate (semiconductor region) and the aluminum alloy film (electrode), and the semiconductor element of Example 1 was obtained.
[0083] The content and film thickness of each component in the diffusion prevention layer of the obtained semiconductor element were measured by the method described above. Table 1 shows the content of each component. in addition, figure 2 A cross-sectional TEM image of the obtained semiconductor element is shown in . Furthermore, the "dots" in Table 1 indicate figure 2 position of the arrow. In addition, the film thickness was 3.0 nm.
[0084] Table 1 ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More