Growth method of strained layer and substrate with strained layer

Abstract

The invention provides a growth method of the strain layer and a substrate with the strain layer. The method comprises the steps of: providing a substrate, the substrate including a support layer, a buried layer on the surface of the support layer, and a top semiconductor layer on the surface of the buried layer; forming a through etching window in the top semiconductor layer; A bridging strip is formed at the etching window, and both ends of the bridging strip are connected to the surface of the top semiconductor layer, and the bridging strip is made of a magnetostrictive material; the buried layer is etched through the etching window, so that the bridging strip and part of the top semiconductor layer The layer is suspended in the air; the ambient magnetic field of the bridge bar is changed to make the bridge bar expand and contract, so that the suspended top semiconductor layer is strained. The advantage of the present invention is that it is a low-cost and high-efficiency method to introduce the characteristic of obvious size change under the change of the magnetic field by using the magnetostrictive phenomenon, and to introduce sufficient strain force through the bridging strips.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for growing a strained layer and a substrate with the strained layer. Background technique [0002] The rapid development of microelectronics technology makes Moore's Law closer and closer to its physical limit. In recent years, silicon-based optoelectronic integration is considered to be an extension that can effectively solve Moore's Law. At present, the main obstacle hindering the integration of silicon-based optoelectronics is how to solve the problem of silicon-based and CMOS-compatible light sources. Therefore, finding an effective light-emitting material that is compatible with silicon-based processes is an important part of silicon-based optoelectronic integration. [0003] When the tensile stress in the Ge thin film is about 2% (when Ge is highly doped, the required tensile stress is smaller), the original indirect band gap can be transformed into a direc...

AI Technical Summary

Problems solved by technology

[0004] There are mainly the following methods for preparing tensile stress Ge thin films: 1. Utilizing the difference in thermal expansion coefficient of Ge and Si, a tensile strained Ge thin film can be obtained by direct heat treatment, but the degree of strain Ge obtained by this method is small, only ~0.3% ; 2. Using III-V compounds as a buffer layer can obtain large-stress strained Ge, but because epitaxy III-V materials require MBE or MOCVD, the price is expensive and the growth rate is slow, which increases the cost

Images