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SET (Single Event Transient) reinforced structure based on protective door replacement circuit

A technology that replaces the circuit and reinforces the structure. It is applied in the design field of the basic circuit unit of the aviation application specific integrated circuit. It can solve the problems that it is difficult to reinforce the SET effect of the combinational logic, it is difficult for designers to accept, and the large-area cost is high.

Inactive Publication Date: 2014-04-23
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although triple redundancy is often used to harden registers against SEU effects, it is difficult to harden combinatorial logic against SET effects
This is because triple-mode redundancy will cause a large area overhead, which is difficult for designers to accept
Currently, the suppression of SET generally adopts the filtering scheme of delay unit + guard gate. For details, refer to A.Balasubramanian, B.L.Bhuva, J.D.Black, and L.W.Massengill, "RHBD Techniques for Mitigating Effects of Single-Event Hits Using Guard-Gates," IEEE Trans .Nucl.Sci., vol.52, no.6, pp.2531–2535, Dec.2005, the protection gate circuit structure shown in it is as follows figure 1 As shown, the protection gate circuit adopted will also produce SET phenomenon under the condition of single event attack

Method used

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  • SET (Single Event Transient) reinforced structure based on protective door replacement circuit
  • SET (Single Event Transient) reinforced structure based on protective door replacement circuit
  • SET (Single Event Transient) reinforced structure based on protective door replacement circuit

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Embodiment Construction

[0015] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0016] Such as figure 2 As shown, the protection gate replacement circuit of the embodiment of the present invention specifically includes: four NMOS transistors 25, 26, 27, 28 and four PMOS transistors 21, 22, 23, 24, and the specific connection relationship is as follows: the drain of the PMOS transistor 21 , the drain of the NMOS transistor 25, the gate of the PMOS transistor 22 and the gate of the NMOS transistor 8 are connected together as the first input terminal IN0; the drain of the PMOS transistor 23, the drain of the NMOS transistor 27, and the gate of the PMOS transistor 4 The drain of PMOS transistor 22, the drain of NMOS transistor 26, the gate of PMOS transistor 23 and the gate of NMOS transistor 25 are connected together as the second input terminal IN1. An output terminal OUT0; the drain of the PMOS transistor 24, the drain of...

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Abstract

The invention discloses an SET (Single Event Transient) reinforced structure based on a protective door replacement circuit. The method comprises the following specific steps that the protective door replacement circuit performs transmission by use of double signals, so that when a single node is attacked, the signal of the other node is not influenced; when the two signals are unattacked signals, the two signals can enter into a reinforced register simultaneously so as to achieve corresponding loading effects; when one signal attacked and the other signal is not attacked, due to the difference of the two signals, the corresponding loading effects can not be achieved, so that a generated SET can not be loaded to a rear reinforced register. On the basis of the protective door replacement circuit provided by the invention and an existing reinforced register, the invention provides a reinforced structure aiming at a register clock network and a reinforced structure aiming at a register reset network. When a protective door circuit is attacked by ions, the generated SET is not transferred to the rear reinforced register but is converted into an SEU (Single Event Upset).

Description

technical field [0001] The invention belongs to the field of microelectronic integrated circuit design, such as the anti-radiation reinforcement technology in avionics, and specifically relates to the design of basic circuit units of aviation specific integrated circuits. Background technique [0002] High-energy ions in space include heavy particles, protons, alpha particles, neutrons, etc., which can cause single event effects in semiconductor devices, seriously affecting the reliability and life of spacecraft. The single event effect refers to the energy deposition of high-energy charged ions in the radiation when they pass through the sensitive area of ​​the electronic device, generating a large number of electron-hole pairs, which are collected by the N and P regions during the drift process, resulting in an instantaneous Pulse, a phenomenon in which the logic state of a sensitive node of a device is affected. Among them, the single event effect (Single Event Effect, S...

Claims

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Application Information

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IPC IPC(8): H03K17/08H03K17/28
Inventor 李磊周婉婷刘辉华周恒李赛野
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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