A core-shell structure photocatalytic material with visible light responsiveness and preparation method thereof

A technology of photocatalytic material and core-shell structure, which is applied in the field of core-shell structure photocatalytic material and preparation, and can solve the problems of limited life of catalyst and weak structure stability.

Active Publication Date: 2016-02-10
南京浦裕投资有限公司
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Currently, the preparation of V 2 o 5 The method with other wide-bandgap semiconductor composite materials is mainly liquid-phase hydrothermal method. These methods have strong randomness, and the morphology is mostly a simple mixture of two materials. The stability of the structure is not strong in the repeated photocatalytic process, resulting in Catalyst has a limited lifetime

Method used

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  • A core-shell structure photocatalytic material with visible light responsiveness and preparation method thereof
  • A core-shell structure photocatalytic material with visible light responsiveness and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The first step is to prepare rod-shaped single crystal ZnO:

[0020] Mix ZnO and graphite powder with a mass ratio of 1:1 evenly, put them into a quartz boat, put the quartz boat into the middle of the horizontal tube furnace, and place the cleaned silicon wafer at the 5-10cm downwind end of the quartz boat Substrate, the silicon substrate adopts single crystal silicon wafer with crystal orientation, and heats the horizontal tube furnace for one hour to make ZnO undergo redox reaction. ~99.999% nitrogen is used as the carrier gas, the flow rate is controlled at 40~65sccm, and then cooled naturally, the product on the silicon wafer substrate is collected, and finally a pure white product of ZnO is obtained. The crystal structure of ZnO is shown in figure 1 In figure a in the middle, there is a rod-shaped single crystal with a length of 5-15 μm and a diameter of about 300-600 nm.

[0021] The second step V 2 o 5 Coating of precursor on ZnO surface:

[0022] Vanadyl a...

Embodiment 2

[0028] The first step is to prepare rod-shaped single crystal ZnO:

[0029]Mix ZnO and graphite powder with a mass ratio of 3:1 evenly, put it into a quartz boat, put the quartz boat into the middle of the horizontal tube furnace, and place the cleaned silicon wafer at the 5-10cm downwind end of the quartz boat The substrate, the substrate is made of silicon dioxide substrate, and the horizontal tube furnace is heated for 1.2 hours to make ZnO undergo oxidation-reduction reaction. Carrier gas, the flow rate is controlled at 40-65sccm, and then naturally cooled to collect the product on the silicon wafer substrate, and finally a pure white ZnO product is obtained. The crystal structure of ZnO is shown in figure 1 In figure a in the middle, there is a rod-shaped single crystal with a length of 5-15 μm and a diameter of about 300-600 nm.

[0030] The second step V 2 o 5 Coating of precursor on ZnO surface:

[0031] Use vanadyl acetylacetonate as the vanadium raw material, put...

Embodiment 3

[0036] The first step is to prepare rod-shaped single crystal ZnO:

[0037] In the first step, mix ZnO and graphite powder with a mass ratio of 5:1 evenly, put them into a quartz boat, then put the quartz boat into the middle of the horizontal tube furnace, and place a washing Clean silicon wafer substrate, the substrate is made of sapphire substrate, heated in a horizontal tube furnace for 0.8 hours to make ZnO undergo redox reaction, the heating temperature is controlled at about 900°C, and the Nitrogen is used as the carrier gas, the flow rate is controlled at 40-65 sccm, and then cooled naturally, the product on the silicon wafer substrate is collected, and finally a pure white product of ZnO is obtained. The crystal structure of ZnO is shown in figure 1 In figure a in the middle, there is a rod-shaped single crystal with a length of 5-15 μm and a diameter of about 300-600 nm.

[0038] The second step V 2 o 5 Coating of precursor on ZnO surface:

[0039] Use vanadyl ac...

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Abstract

The invention relates to a photocatalytic material with visible light response capability and a core-shell structure, and a preparation method. The material takes a rodlike single crystal of ZnO as a core, and is coated with a V2O5 polycrystal shell layer. The preparation method of the photocatalytic material comprises the following steps: by adopting a thermal evaporation method, synthesizing a single-crystal rodlike ZnO nanomaterial by taking ZnO powder and graphite powder as raw materials; by adopting a chemical vapor deposition method, depositing a V2O5 precursor on the surface of the rodlike ZnO nanomaterial by taking vanadiumoxy acetylacetonate [VO(acac)2] as a raw material under the nitrogen protection; finally performing thermal oxidization on the coated material to form a the photocatalytic material with a V2O5@ZnO core-shell structure. The core-shell photocatalytic material is controllable in morphology, strong in repeatability, stable in structure, good in photocatalysis effect, and the method is simple in technology, and suitable for large-scale industrial product, and has excellent application prospects.

Description

technical field [0001] The invention relates to optical materials, more specifically to a core-shell structure photocatalytic material with visible light responsiveness and a preparation method. Background technique [0002] As a wide bandgap semiconductor, ZnO has a large exciton binding energy, and has great application prospects in optoelectronic devices. As a photocatalyst, ZnO has been favored due to its advantages of easy synthesis, high stability and low cost. received widespread attention. However, since ZnO has a band gap of 3.3eV and is located in the ultraviolet region, the utilization rate of sunlight is low, and the recombination rate of photogenerated carriers in ZnO is very fast, so the photocatalytic efficiency is poor. Therefore, it is key to study the composite photocatalyst of ZnO and other semiconductor materials, broaden its spectral absorption range, and reduce the recombination rate of photogenerated carriers. V 2 o 5 As a semiconductor material, i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/22B01J35/02A62D3/17B82Y30/00B82Y40/00A62D101/26A62D101/28
Inventor 尹海宏宋长青王志亮陈云施敏张雪锋黄静郭兴龙
Owner 南京浦裕投资有限公司
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