Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and system for erasing non-volatile memory

A non-volatile memory, over-erase technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as leakage current, and achieve the effect of avoiding leakage current, avoiding cost, and eliminating hidden dangers

Active Publication Date: 2016-12-21
GIGADEVICE SEMICON (BEIJING) INC
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method and system for erasing a nonvolatile memory, which can solve the hidden danger of leakage current that may be caused by abnormal power failure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for erasing non-volatile memory
  • Method and system for erasing non-volatile memory
  • Method and system for erasing non-volatile memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] refer to figure 1 , showing Embodiment 1 of a method for erasing a non-volatile memory of the present invention, including the following steps:

[0049] Step 101, receiving an erase operation instruction.

[0050] Step 102, the pre-programming module judges whether the threshold voltage of the memory cell to be erased is normal, if so, then performs normal pre-programming operation to all memory cells to be erased, otherwise, performs initial pre-programming to the memory cell whose threshold voltage is abnormal Programming operation, until the threshold voltage of all memory cells to be erased is normal, perform normal pre-programming operation on all memory cells to be erased, the programming voltage of the initial pre-programming operation is lower than the programming voltage of normal pre-programming operation.

[0051] Whether the threshold voltage of the memory cell is normal is judged by the following method: judging whether the threshold voltage of the memory ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an erasing method of a nonvolatile memory. The erasing method comprises the following steps of receiving an erase command; judging whether a threshold voltage of a storage unit to be erased is normal or not, normally pre-programming the storage unit to be erased if the threshold voltage of the storage unit to be erased is normal, otherwise, initially pre-programming the storage unit with abnormal threshold voltage, and normally pre-programming all storage units to be erased after the threshold voltage of all storage units to be erased is normal, wherein the programming voltage of the initial pre-programming operation is smaller than that of the normally pre-programming operation; erasing the storage unit after being pre-programmed; and verifying whether an over-erased storage unit exists or not after the erasing operation, restoring the storage unit if the over-erased storage unit exists, otherwise, ending the operation. The invention also provides an erasing system of the nonvolatile memory for realizing the method. By adopting the erasing method and the erasing system of the nonvolatile memory, the leak current caused by the abnormal power failure can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a method and system for erasing a nonvolatile memory. Background technique [0002] There are two basic storage units in the memory, erasing the storage unit (erase cell) and programming storage unit (program cell), that is, "1" and "0", so there are two corresponding types of erasing and programming. Basic operation of memory cells. Among them, the process of changing "0" to "1" is called erasing; otherwise, it is called programming. [0003] The principle of traditional memory erasing is as follows: first, perform Pre_PGM (pre-programming) operation on the target logic block (block) that needs to be erased, in order to program all memory cells to the same "0" state memory cells, and That is, the high threshold state. The basis for judging whether the Pre_PGM operation is completed is whether all cells pass PV verification (program verification). When the PV ver...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/14G11C16/06
Inventor 苏志强潘荣华张现聚丁冲
Owner GIGADEVICE SEMICON (BEIJING) INC