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A method of manufacturing a light emitting diode

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as degradation of electrical characteristics of light-emitting diodes, poor adhesion between multilayer electrode structures and semiconductor epitaxial layers, and poor matching of electrode structures

Active Publication Date: 2016-09-07
LIYANG TECH DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the problem of the multilayer electrode structure is that the matching between the electrode structures of each layer is poor and the adhesion between the multilayer electrode structure and the semiconductor epitaxial layer is poor, and whether the metal electrode has a single layer structure or a multilayer structure, in some Under certain circumstances, the metal elements in the metal electrode may also diffuse into the semiconductor material, which will lead to the degradation of the overall electrical characteristics of the light-emitting diode or even more serious problems.

Method used

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  • A method of manufacturing a light emitting diode

Examples

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Effect test

Embodiment 1

[0018] The following reference figure 1 The structure and manufacturing method of the GaN-based light emitting diode of the present invention will be described in detail. For clarity, the various structures shown in the figures are not drawn to scale, and the present invention is not limited to the structures shown in the figures.

[0019] Step 1: first provide the substrate 2, the material of the substrate 2 can be sapphire, silicon carbide, silicon, gallium nitride, gallium arsenide, aluminum nitride, glass and so on.

[0020] Step 2: Evaporate or sputter a reflective electrode 1 on the back of the substrate 2, that is, on the surface opposite to the front of the substrate 2 on which the GaN-based epitaxial layer light-emitting structure is subsequently formed. The reflective electrode 1 is used as an n-contact electrode and has a reflective function The material of the reflective electrode 1 is a metal with high reflective properties such as Al, Ag, Au, Pt and the like.

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Embodiment 2

[0034] The structure and manufacturing process of the GaN-based light-emitting diode in Example 2 are basically the same as those in Example 1, except for the composition and thickness of each layer in the multilayer p-contact electrodes 9-12. The main differences between Embodiment 2 and Embodiment 1 will be described below, and the same structure and manufacturing process will not be repeated.

[0035] Steps one to seven are the same as the corresponding steps in Example 1, starting from step eight:

[0036] Step 8: Subsequently, by evaporation, sputtering and other methods, a multi-layer p-contact electrode 9-12 is formed on the metal barrier layer 14 in the opening, and the multi-layer p-contact electrode 9-12 has a four-layer structure. The method of its formation is described in detail below.

[0037] Firstly, a Ti metal adhesion layer 9 is formed on the metal barrier layer 14 in the opening with a thickness of 50-100 nm, preferably 75 nm. It facilitates the adhesion b...

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Abstract

The invention discloses a GaN-based LED fabricating method. The GaN-based LED fabricating method comprises providing a substrate (2); forming a reflecting electrode (1) on the back surface of the substrate (2); forming a non-doped GaN or AlN buffer layer (3) on the front surface of the substrate (2); forming a GaN-based epitaxial layer light-emitting structure on the non-doped GaN or AlN buffer layer (3); forming an ITO transparent electrode layer (8) on the GaN-based epitaxial layer light-emitting structure; forming a plurality of layers of p contact electrode layers (9-12) on the GaN-based epitaxial layer light-emitting structure; forming a bonding lead wire (13) on the plurality of layers of p contact electrode layers (9-12). The GaN-based LED fabricated through the GaN-based LED fabricating method has excellent electric characteristic and light emitting efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a method for manufacturing a gallium nitride (GaN)-based light-emitting diode. Background technique [0002] The advantages of semiconductor light emitting diodes are high luminous intensity, strong light directivity, low energy consumption, low manufacturing cost, etc. Technical problems, such as weak adhesion between the P-type electrode and the P-type semiconductor layer in the epitaxial semiconductor structure of the LED, poor ohmic contact performance, metal in the electrode will diffuse into the epitaxial semiconductor structure, and so on. This hinders further improvement in the electrical characteristics of light-emitting diodes. [0003] In recent years, in order to improve the brightness of light-emitting diodes, light-emitting diodes with vertical structure have been developed. Compared with light-emitting diodes with a positive structure, that is, a platform (mes...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14
CPCH01L33/0075H01L33/382H01L33/40H01L33/42H01L2933/0016
Inventor 张翠
Owner LIYANG TECH DEV CENT