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Inductively coupled plasma processing device and control method thereof

A plasma and processing device technology, applied in the field of plasma processing device and its control, can solve problems such as difficulties

Active Publication Date: 2017-10-20
LIGADP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In addition, in order to process larger-area substrates, these helical antennas need to be used in a plurality of different areas, but the structure of such antennas and impedance control for processing large-area substrates present greater difficulties.

Method used

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  • Inductively coupled plasma processing device and control method thereof
  • Inductively coupled plasma processing device and control method thereof
  • Inductively coupled plasma processing device and control method thereof

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Embodiment Construction

[0030] Hereinafter, embodiments of the inductively coupled plasma processing apparatus according to the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be implemented in various forms. The embodiments described below are only used to fully disclose the present invention, so that those skilled in the art can fully understand the protection scope of the invention.

[0031] figure 1 It is a figure which shows the inductively coupled plasma processing apparatus which concerns on the Example of this invention. like figure 1 As shown, the inductively coupled plasma processing apparatus according to the present invention includes a chamber 10 having a shutter 14 and forming an exhaust hole 11 necessary to evacuate the inside of the process space. Inside the chamber 10 there is a table 12 for placing substrates (wafers or transparent substrates of different size...

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Abstract

The present invention relates to an inductively coupled plasma processing apparatus and a control method thereof. The inductively coupled plasma processing apparatus of the present invention comprises: a convertible capacitor operating to control impedance in source coils by being arranged in each of the source coils; a motor automatically rotating the convertible capacitor; a convertible capacitor control device having an outer encode recognizing the rotation of the motor; a plurality of slave control units for grouping the convertible control devices and controlling them in group; and a host computer connected to the slave control unit via network to control the slave control units. Each of the slave control units receives a minimum value or maximum value for the operation of the grouped convertible capacitor from the host computer and saves the same. When the slave control units receive a home sequence operation command from the host computer, corresponding convertible capacitor is operated in the set minimum or maximum value and the motor is operated to set operation value. According to the present invention, the inductively coupled plasma processing apparatus and control method thereof precisely control the operation of convertible capacitors controlling impedance by being connected to each of the source coils with motor. By the present invention, impedance control for the source coils is effectively made and automatic precise control for the convertible capacitors are possible.

Description

technical field [0001] The present invention relates to an inductively coupled plasma processing apparatus and a control method thereof, and more particularly, to an inductively coupled plasma processing apparatus capable of automatically performing impedance control and a control method thereof. Background technique [0002] Inductively coupled plasma processing apparatuses are apparatuses used in semiconductor and display manufacturing processes to perform etching processes or deposition processes. Compared with reactive ion etching equipment or capacitively coupled plasma etching equipment, the inductively coupled plasma processing equipment used for the etching process has a very good etching effect. [0003] However, it is difficult for an inductively coupled plasma processing apparatus to etch a large-area substrate. Usually, the antenna is provided in the upper part of the vacuum chamber of the inductively coupled plasma processing apparatus. In order to efficiently...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/46
CPCH01L21/02315H01L21/3065H01L21/683H03H7/40H05H1/46
Inventor 林正焕
Owner LIGADP