Inductively coupled plasma processing device and control method thereof
A plasma and processing device technology, applied in the field of plasma processing device and its control, can solve problems such as difficulties
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[0030] Hereinafter, embodiments of the inductively coupled plasma processing apparatus according to the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be implemented in various forms. The embodiments described below are only used to fully disclose the present invention, so that those skilled in the art can fully understand the protection scope of the invention.
[0031] figure 1 It is a figure which shows the inductively coupled plasma processing apparatus which concerns on the Example of this invention. like figure 1 As shown, the inductively coupled plasma processing apparatus according to the present invention includes a chamber 10 having a shutter 14 and forming an exhaust hole 11 necessary to evacuate the inside of the process space. Inside the chamber 10 there is a table 12 for placing substrates (wafers or transparent substrates of different size...
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