Physical vapor deposition apparatus

A technology of physical vapor deposition and sputtering targets, which is applied to electrical components, ion implantation plating, coatings, etc., can solve the problems of radio frequency power loss, difficulty in plasma initiation, waste of radio frequency power, etc., and achieve uniform sputtering Effect

Active Publication Date: 2014-06-11
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large coupling capacitance between the cylindrical electrode and the outer wall of the enclosure, part of the radio frequency power is lost through the capacitance, which makes it difficult to start the plasma and leads to waste of radio frequency power

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Physical vapor deposition apparatus
  • Physical vapor deposition apparatus
  • Physical vapor deposition apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0034] In describing the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "top", "bottom", "inner", "outer" etc. indicate an orientation or position The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention discloses a physical vapor deposition apparatus, which comprises: a reaction chamber; a substrate supporting member arranged on the bottom of the reaction chamber and opposite to a sputtering target; a direct current power supply coupled to the sputtering target; and a radio frequency power supply, wherein the radio frequency feed-in member is coupled to the sputtering target, and comprises a distribution ring and a plurality of distribution strips arranged along the circumference of the distribution ring at intervals, and the distribution ring is coupled to the radio frequency power supply and is coupled to the sputtering target through the distribution strip. According to the physical vapor deposition apparatus of the embodiments, the negative bias voltage produced on the target is reduced so as to reduce damage on the substrates or wafers, and the deposition rate is significantly improved so as to improve the process efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a physical vapor deposition device. Background technique [0002] In PVD sputtering process equipment, a negative bias is usually applied to the target, the gas (Ar, etc.) in the reaction chamber is excited into plasma, and ions are attracted to bombard the target, the target material is sputtered, and deposited on a wafer or substrate. In different application fields (such as semiconductor, solar energy, LED, etc.), there are different requirements for process parameters such as sputtering voltage and sputtering rate. Especially for conductive films such as ITO and AZO used in solar energy, LED and other fields, a lower sputtering voltage is required to ensure better process performance of the sputtered deposited film. [0003] In a traditional physical vapor deposition device, a DC power supply applies DC power to the target, excites the gas into plasma, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/40C23C14/08
CPCC23C14/08C23C14/35H01J37/3444H01J37/3405H01J37/3435
Inventor 陈鹏赵梦欣丁培军王厚工武学伟刘建生耿波邱国庆文莉辉
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap