Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an emitter metal electrode and a first field plate; a base region and a main junction are formed in the substrate; the emitter metal electrode is formed on the surfaces of the base region and an emitting region and is electrically connected with the base region and the emitting region; and the first field plate covers the main junction and is electrically connected with the emitter metal electrode. According to the semiconductor device provided by the invention, a current path exists in the base region which is adjacent to the main junction at a transition region, such that a current release path can be provided for dynamic avalanche current which appears in switch-on and switch-off processes of the semiconductor device, and therefore, the failure of the semiconductor device caused by the dynamic avalanche current can be avoided, and the performance of the semiconductor device can be improved; and the first field plate covers the main junction and is electrically connected with the base region, the potential of the first field plate is zero constantly, and therefore, an electric field shielding effect of the first field plate can be enhanced, and therefore, a reverse voltage withstanding capacity of the semiconductor device can be improved.

Description

technical field

[0001] The invention belongs to the field of semiconductor devices, in particular to a semiconductor device and a manufacturing method thereof. Background technique

[0002] Modern high-voltage semiconductor devices such as IGBT, VDMOS, and power diodes are the third-generation power electronics products. Due to their high operating frequency, fast switching speed, and high control efficiency, they have been more and more widely used in the field of power electronics. The blocking capability of modern high-voltage power semiconductor devices is a very important symbol to measure the development level of semiconductor devices. According to its application, the breakdown voltage ranges from 25V to 6500V. However, due to the planar terminal structure used in modern semiconductor technology, the junction depth Shallow, the edge of the junction is bent, so that the withstand voltage is reduced, the stability of the withstand voltage is poor, the safe working area ...

Examples

Embodiment Construction

[0027] As mentioned in the background section, semiconductor devices in the prior art are prone to failure and have poor performance.

[0028] The inventors found that there are two main reasons why existing semiconductor devices are prone to failure: on the one hand, during the turn-on and turn-off processes of the semiconductor device, the base region close to the main junction in the active region of the semiconductor device is prone to latch-up Lock-in effect, causing semiconductor devices to fail. On the other hand, when the semiconductor device is subjected to a reverse voltage, the main junction of the semiconductor device is prone to premature breakdown, resulting in failure of the semiconductor device.

[0029] The inventors have found that the main reason for the latch-up effect to occur easily in the base region close to the main junction in the active region of the semiconductor device is that there will be a large dynamic avalanche current during the turn-on and t...

technical field

[0001] The invention belongs to the field of semiconductor devices, in particular to a semiconductor device and a manufacturing method thereof. Background technique

[0002] Modern high-voltage semiconductor devices such as IGBT, VDMOS, and power diodes are the third-generation power electronics products. Due to their high operating frequency, fast switching speed, and high control efficiency, they have been more and more widely used in the field of power electronics. The blocking capability of modern high-voltage power semiconductor devices is a very important symbol to measure the development level of semiconductor devices. According to its application, the breakdown voltage ranges from 25V to 6500V. However, due to the planar terminal structure used in modern semiconductor technology, the junction depth Shallow, the edge of the junction is bent, so that the withstand voltage is reduced, the stability of the withstand voltage is poor, the safe working area ...

Examples

Embodiment Construction

[0027] As mentioned in the background section, semiconductor devices in the prior art are prone to failure and have poor performance.

[0028] The inventors found that there are two main reasons why existing semiconductor devices are prone to failure: on the one hand, during the turn-on and turn-off processes of the semiconductor device, the base region close to the main junction in the active region of the semiconductor device is prone to latch-up Lock-in effect, causing semiconductor devices to fail. On the other hand, when the semiconductor device is subjected to a reverse voltage, the main junction of the semiconductor device is prone to premature breakdown, resulting in failure of the semiconductor device.

[0029] The inventors have found that the main reason for the latch-up effect to occur easily in the base region close to the main junction in the active region of the semiconductor device is that there will be a large dynamic avalanche current during the turn-on and t...

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