Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating

A technology of electroplating device and electrolyte, applied in the direction of current insulation device, electrolysis process, electrolysis components, etc.

Active Publication Date: 2014-06-18
NOVELLUS SYSTEMS
View PDF15 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High plating rates for WLP and TSV applications challenge plating uniformity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
  • Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
  • Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] In this application, the terms "semiconductor wafer," "wafer," "substrate," "wafer substrate," and "partially fabricated integrated circuit" are used interchangeably. It will be understood by those of ordinary skill in the art that the term "partially fabricated integrated circuit" may refer to a silicon wafer at any of the many stages of fabrication of an integrated circuit thereon. The following detailed description assumes that the invention is implemented on a wafer. Typically, semiconductor wafers are 200, 300 or 450 millimeters in diameter. However, the present invention is not limited thereto. Workpieces can be of various shapes, sizes and materials. In addition to semiconductor wafers, other workpieces that can take advantage of the present invention include various items such as printed circuit boards.

[0049] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the presented embodiments. The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

Description

[0001] Related Application Cross Reference [0002] This application claims the benefit of priority to U.S. Provisional Application No. 61 / 736,499 [Attorney Docket LAMRP015P], entitled "ENHANCEMENT OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING," filed December 12, 2012, by reference This provisional application is incorporated herein in its entirety for all purposes. Additionally, this application is a continuation-in-part of U.S. Patent Application No. 13 / 893,242 [Attorney Docket NOVLP367X1], entitled "CROSS FLOW MANIFOLD FOR ELECTROPLATING APPARATUS," filed May 13, 2013, U.S. Patent Application No. 13 / 893,242 is a continuation-in-part of U.S. Patent Application No. 13 / 172,642 [Attorney Docket No. .13 / 172,642 claims U.S. Provisional Application No. 61 / 405,608, filed Oct. 21, 2010, entitled "FLOW DIVERTERS AND FLOW SHAPING PLATES FOR ELECTROPLATING CELLS," [Agency Docket No. NOVLP396P], Aug. 18, 2010 U.S. Provisional Application No. 61 / 374,911...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25D17/00C25D7/12C25D21/12
CPCC25D5/08C25D7/12C25D21/12C25D5/04C25D17/001C25D17/002C25D17/008C25D17/02C25D21/10
Inventor 史蒂文·T·迈耶布莱恩·L·巴卡柳傅海英托马斯·波努司瓦米希尔顿·迪艾斯·卡米罗罗伯特·拉什大卫·W·波特
Owner NOVELLUS SYSTEMS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products