Radio-frequency micro-capacitance fingerprint acquisition chip and method
A fingerprint acquisition and capacitance technology, which is used in electrical digital data processing, character and pattern recognition, instruments, etc., can solve the problem that fingerprint sensors cannot meet the special requirements of mobile devices.
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Embodiment 1
[0143] see Figure 4 , Figure 4 It is a schematic diagram of the circuit structure of the sensing unit in the embodiment of the radio frequency microcapacitance fingerprint sensor chip of the present invention. As shown in the figure, each sensing unit 201 may include: a single sensing electrode 402 formed by a top layer metal formed by an integrated circuit process and a sensing capacitor dielectric layer, which is insulated by the top layer metal 401 Layer structure, a single sensing electrode 401 forms a single sensing capacitor 40 with a finger and a sensing capacitor dielectric layer.
[0144] Besides, each sensing unit 201 also includes a reference capacitor 423 , an active amplifier 44 , a correction capacitor 421 , an enhancement capacitor 420 , a reference capacitor 423 and switch circuits 410 , 411 , 412 , 413 . Among them, a single correction electrode formed by any metal layer of the integrated circuit process, the single correction electrode and a single sensin...
Embodiment 2
[0182] see Figure 5 , Figure 5 It is a schematic diagram of the circuit structure of the composite sensing unit in the embodiment of the radio frequency microcapacitance fingerprint sensor chip of the present invention. as the picture shows,
[0183] Each composite sensing unit 201 includes optional multiple sub-sensing unit structures; two sensing electrodes 502a and 502b formed by the top layer metal of the integrated circuit process; a sensing capacitor dielectric layer (not shown), which is integrated An insulating layer, a non-conductive adhesive, and an insulating substrate are formed on the top metal of the circuit technology, and two sensing electrodes 502a and 502b form sensing capacitors 50a and 50b with the finger corium layer 501 and the sensing capacitor dielectric layer; Sensing electrodes 502a and 502b form two enhancement capacitors 520a and 520b, two sensing unit offset correction capacitors 521a and 521b, and two shielding capacitors 522a and 522b formed ...
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