Unlock instant, AI-driven research and patent intelligence for your innovation.

Thermal spin torqure transfer magnetoresistive random access memory

A magnetoresistive random access, spin torque technology, applied in static memory, digital memory information, magnetic field controlled resistors, etc., can solve the problem of large transistors

Active Publication Date: 2014-06-18
格芯公司
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the large amount of current necessary to heat the tunnel junction to write to the tunnel junction can make the transistors in the MRAM cell too large for some applications, possibly due to electromigration issues at advanced nodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thermal spin torqure transfer magnetoresistive random access memory
  • Thermal spin torqure transfer magnetoresistive random access memory
  • Thermal spin torqure transfer magnetoresistive random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] Conventional MRAM devices require a large amount of current to write to the free layer of the tunnel junction. Embodiments of the present invention relate to thermal spin torque transfer MRAM devices having a tunnel junction with multiple layers of different Curie temperatures, wherein at least one of the layers is nonmagnetic at the write temperature in order to reduce the The current required to write the free layer of the tunnel junction.

[0018] figure 1 A thermal spin torque transfer magnetoresistive random access memory (MRAM) circuit 100 according to one embodiment of the invention is illustrated. especially, figure 1 A side view illustrating a cross-section of a portion of thermal spin torque transfer MRAM device 100 , which may also be referred to simply as MRAM device 100 for purposes of this description. In an embodiment of the present invention, the MRAM device 100 may correspond to a thermal spin torque MRAM cell derived from a series of thermal spin to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Curie temperatureaaaaaaaaaa
Login to View More

Abstract

A thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus includes a magnetic tunnel junction and a tunnel junction programming circuit. The magnetic tunnel junction includes a reference layer having a fixed magnetic polarity, a tunnel barrier layer, and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The free layer includes a first layer having a first Curie temperature and a second layer having a second Curie temperature different from the first Curie temperature. The tunnel junction programming circuit is configured to apply a current through the magnetic tunnel junction to generate a write temperature in the magnetic tunnel junction and to write to the free layer of the magnetic tunnel junction.

Description

technical field [0001] Embodiments of the invention relate generally to magnetoresistive random access memory (MRAM), and more particularly to thermally assisted spin torque transfer MRAM with tunnel junctions having multiple layers of free layers. Background technique [0002] Magnetoresistive Random Access Memory (MRAM) is a non-volatile computer memory (NVRAM) technology. Unlike conventional RAM chip technology, MRAM data is not stored as charges or current flow, but rather through magnetic storage elements. The element is formed by two ferromagnetic plates, each of which can maintain the direction of magnetization separated by a thin insulating layer. One of the two plates is a reference magnet set to a specific polarity; the magnetization direction of the other plate can be changed by an electric field or current to be parallel or antiparallel to the magnetization of the reference magnet and is named "free magnet" or " Free Layer". A free magnet can also be called a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L43/08H01L27/22G11C11/16
CPCG11C11/161G11C11/16H01L29/82G11C11/1675Y10S977/933Y10S977/935H10N50/10
Inventor D·C·沃莱吉胡国菡
Owner 格芯公司