Method for changing optical field distribution of semiconductor laser device chips in slow axis direction
A device chip, light field distribution technology, applied in the direction of the device for controlling the output parameters of the laser, etc., can solve the problems of the complex structure of the semiconductor laser, unfavorable miniaturization and other problems, and achieve the effect of avoiding the complexity, improving the efficiency, and being widely used.
Active Publication Date: 2014-06-18
华芯半导体科技有限公司
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Problems solved by technology
However, for many special optical field distributions, it cannot be obtained only by beam shaping, and the use of beam shaping will inevitably make the structure of semiconductor lasers more complicated, which is not conducive to its miniaturization
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[0039] In this embodiment, the light field in the slow axis direction of the semiconductor laser device chip is flat-topped distribution as an example. Figure 3-4 with Figure 6-7 Explain it in detail.
[0040] The selection of the number of light-emitting units of the semiconductor laser device chip can be determined according to the final required power and fill factor, and the design of the light-emitting unit of the semiconductor laser chip can be determined according to the size of the power and fill factor.
[0041] Solution 1: According to an embodiment of one aspect of the present invention, the single-tube device chip is composed of one light-emitting unit, and the current injection area structure of the single light-emitting unit is as follows image 3 , 4 Shown.
[0042] The current injection area of the light-emitting unit of a single-tube semiconductor laser is finely formed into a wave-shaped structure with a number of 9 and a period of 8mm, such as image 3 Shown.
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Provided is a method for changing optical field distribution of semiconductor laser device chips in the slow axis direction. The method is suitable for unit or array device chips, and mainly includes the steps that semiconductor laser unit or array device chips provided with current injection areas of a fine structure of one or more light emitting unit are selected; photoetching and vacuum evaporation are carried out on the current injection areas of one or more light emitting unit according to a certain mode; according to special requirements, photoetching and vacuum evaporation are carried out on the current injection areas of the semiconductor laser unit or array device chips according to certain sizes and shapes, so that the current injection areas are refined, and optical fields of the semiconductor laser unit or array device chips in the slow axis direction are distributed according to the specific requirements. The method is started from a light source of a semiconductor laser device, the optical field distribution in the slow axis direction is changed, the optical field distribution, meeting the special requirements, in the slow axis direction can be obtained by the semiconductor laser unit or array device chips, laser fusion covering efficiency and hardness of a fusion covering layer are improved, and structure complexity is avoided.
Description
Technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a method for changing the light field distribution in the slow axis direction of a semiconductor laser device chip. Background technique [0002] Since semiconductor lasers have the advantages of small size, light weight, and high photoelectric conversion efficiency, their applications in laser processing, military defense, medical and health and other fields are becoming more and more extensive. The mode of the slow axis direction of the semiconductor laser is complex, and the optical field distribution in this direction is an important characteristic of the semiconductor laser, which has important reference significance for the application of the semiconductor laser. Different application fields also have different requirements for the light field distribution of the slow axis. In recent years, the light field distribution in the slow axis direction of the common semic...
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Inventor 尧舜高祥宇王智勇潘飞贾冠男李峙
Owner 华芯半导体科技有限公司