Method for detecting light-resistant layer resisting capacity

Abstract

The invention discloses a method for detecting light-resistant layer resisting capacity. The method includes the steps that the refractive index of the surface of a test silicon wafer serves as an initial refractive index; the silicon wafer is coated with optical resist to form light-resistant layers; different exposure time is adopted for exposing and developing the light-resistant layers of different areas, so that light-resistant layers different in thickness are obtained; the thicknesses of the light-resistant layers on the different areas are measured; ions are injected on the light-resistant layers with a preset quantity; the light-resistant layers on the silicon wafer are stripped; the refractive index of the surface of the silicon wafer of the light-resistant layers different in thickness is measured, so that the resisting capacity of the light-resistant layers different in thickness is judged in combination with an initial refractive index value before ion injection, and then the optimal thickness, suitable for ion injection, of the light-resistant layers is determined. According to the method, only one silicon wafer is needed to achieve the resisting capacity for ion injection of the light-resistant layers different in thickness, it is unnecessary to waste multiple silicon wafers, material is saved, the optimal thickness of the light-resistant layers can be found without a secondary ion mass spectrum test, and the method is simple and meanwhile reduces detection cost.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display, in particular to a method for detecting the blocking ability of a photoresist layer. Background technique [0002] The ion implantation process is a doping technology of semiconductor materials, which means that after the ion beam hits the solid material, the speed is slowly reduced by the resistance of the solid material, and finally stays in the solid material. The ion implantation process has the advantages of low temperature doping, easy masking, precise dose control, and high uniformity, and is used in multiple process steps, such as source and drain doping, channel doping, light doping, drain doping, etc. , so that the semiconductor device made has the characteristics of fast speed, low power consumption, good stability, and high yield rate. Because in different ion implantation processes, the energy and dose of the ion beam required are different, and the ion implantation i...

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Problems solved by technology

[0004] In order to determine the blocking ability of the photoresist barrier layer to ion implantation in the above-mentioned prior art, it is necessary to perform the above operations on as many test silicon wafers as possible, and then test the amount of ions on the silicon wafers one by one. This method has the following disadvantages: on the one hand, it needs It consumes a lot of testing silicon wafers. Due to the high cost of testing silicon wafers, the production and detection costs are too high. On the other hand, secondary ion mass spectrometry is a very expensive testing method. The production of test samples is complicated and requires a lot of testing time. This greatly increases the evaluation cost and time

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