TFT array substrate and manufacture method thereof

A technology of array substrate and manufacturing method, which is applied in the field of thin film transistor array substrate and its manufacturing, and can solve the problems of lower transmittance, liquid crystal alignment disorder, influence, etc.

Inactive Publication Date: 2014-06-25
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the TFT array substrate using SiNx material as the gate insulating layer and passivation layer, the transmittance of the TFT array substrate can only be maintained at about 85%. As the amount of SiNx increases, the stress of the TFT array substrate increases sharply, leading to The rate is reduced, and the deformation of the substrate is increased; moreover, the uneven surface has a great impact on the liquid crystal alignment (cellrubbing) process in the back-end box-to-box process, which makes the liquid crystal alignment disorder and easily causes display abnormalities

Method used

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  • TFT array substrate and manufacture method thereof
  • TFT array substrate and manufacture method thereof
  • TFT array substrate and manufacture method thereof

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Embodiment Construction

[0037] Since the TFT as a whole will become flat after using the organic resin, the cell rubbing process can be more easily controlled, and the refractive index of the organic resin is basically the same as that of the substrate. Therefore, the organic resin used in the present invention can be used as a flattening material, and can improve the transmittance of the TFT array substrate.

[0038] A thin film transistor TFT array substrate, comprising: a base substrate, TFTs formed on the base substrate, gate lines, data lines, and pixel electrodes, wherein, on the TFT array substrate except the TFT area, Structures other than the gate lines, data lines and pixel electrodes are all formed using organic resin.

[0039] Here, the thin film transistor TFT array substrate further includes: a gate insulating layer; wherein, the gate insulating layer includes: a gate insulating layer formed on the TFT region;

[0040] The thin film transistor TFT array substrate may also include: a pa...

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Abstract

The invention discloses a thin film transistor (TFT) array substrate which comprises a base substrate, a TFT, grid lines, data lines and a pixel electrode, wherein the TFT, the grid lines, the data lines and the pixel electrode are formed on the base substrate; the area of the TFT array substrate, except the TFT area, and the structure, except the grid lines, the data lines and the pixel electrode are made of organic resin. The invention also discloses a manufacture method of the thin film transistor (TFT) array substrate. According to the TFT array substrate and the manufacture method, the loss of penetration light can be reduced, and transmittance of the whole TFT array substrate is improved.

Description

technical field [0001] The present invention relates to the technical field of array substrates, in particular to a thin film transistor (Thin Film Transistor, TFT) array substrate and a manufacturing method thereof. Background technique [0002] At present, in the TFT production process, silicon nitride (SiNx) materials are generally used for the gate insulating layer and the passivation layer, and the SiNx material itself has the advantages of good stability and good insulation. However, for the TFT array substrate using SiNx material as the gate insulating layer and passivation layer, the transmittance of the TFT array substrate can only be maintained at about 85%. In addition, the uneven surface has a great impact on the liquid crystal alignment (cell rubbing) process in the back-end cell-to-cell process, which makes the liquid crystal alignment disorder and easily causes display abnormalities. Contents of the invention [0003] In view of this, the main purpose of th...

Claims

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Application Information

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IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1248H01L27/1288H01L2021/775
Inventor 郭建
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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