Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve the problems of increasing the area of ​​semiconductor devices, and achieve the effects of reducing the area, increasing the width, and reducing the production cost

Active Publication Date: 2018-05-22
HYUNDAI MOTOR CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The channel width can be extended to increase the amount of conduction current; however, since the channel width is proportional to the thickness of the p-type epitaxial layer, the p-type epitaxial layer has to be made thicker, resulting in a reduction in the area of ​​the semiconductor device Increase

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may be modified in many different forms and should not be construed as limited to the example embodiments set forth herein. Rather, example embodiments of this invention are provided so that this disclosure will be thorough and complete, and will fully convey to those skilled in the art.

[0031] In the drawings, the thicknesses of layers and regions may be exaggerated for clarity. In addition, when it is described that a layer is formed on another layer or on a substrate, it means here that the layer may be formed on another layer or on a substrate, or a third layer may be interposed between the layer and another layer or on a substrate. Like numbers refer to like elements throughout this specification.

[0032] figure 1 is a cross-sectional view of a semiconductor device according to an example embodiment of the present invention. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a semiconductor device including silicon carbide (SiC) and a method of manufacturing the same. The present invention utilizes trench gates to increase the width of the channel in silicon carbide MOSFETs. Compared with conventional techniques, according to example embodiments of the present invention, the width of a channel may be increased by forming a plurality of protrusions extending to the p-type epitaxial layer on both sides of the trench.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority from Korean Patent Application No. 10-2012-0157508 filed in the Korean Intellectual Property Office on December 28, 2012, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a semiconductor device including silicon carbide (SiC) and a method of manufacturing the same. Background technique [0004] With the recent trend of large-sized and large-capacity application devices, power semiconductor devices having high breakdown voltage, high current capacity, and high-speed switching characteristics have become necessary. [0005] Accordingly, much research and development on MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) using silicon carbide (SiC) is underway, instead of conventional MOSFETs using silicon. In particular, there has been a great deal of development of vertical trench MOSFETs...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/10H01L21/336
CPCH01L29/1037H01L29/66068H01L29/78H01L29/7827H01L29/41766H01L29/1608H01L29/7813H01L29/4236H01L29/0688H01L29/66666H01L29/66734H01L29/7802H01L29/66795H01L29/66787H01L29/7834H01L29/42312H01L29/42316H01L29/4232
Inventor 李钟锡洪坰国千大焕郑永均
Owner HYUNDAI MOTOR CO LTD