A high-power LED lamp using ceramic heat dissipation
A LED lamp, high-power technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems that affect the luminous efficiency of LED chips, uneven luminous light in the chip luminous area, and the N-level solder layer 38 is too long, etc., to improve LED performance. Luminous efficiency, increased light penetration layer area, the effect of optimal luminous efficiency
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[0079] Combine below Figure 1 to Figure 34 , the present invention is further described:
[0080] Such as figure 1 As shown, the substrate 1 is a carrier, generally made of materials such as sapphire, silicon carbide, silicon, GaAs, AlN, ZnO or GaN.
[0081] On the substrate 1, a layer of concave-convex surface 12 is firstly formed by etching. The concave-convex surface 12 can reduce the total reflection of light in the chip and increase the light extraction rate.
[0082] The buffer layer 2 is a transition layer on which high-quality N, P, quantum wells and other materials are grown.
[0083] LED is composed of pn structure, buffer layer 2, N-type layer 3, N-type confinement layer 4, P-type confinement layer 6 and P-type layer 7 are to form P and N-type materials required for making LED. The light-emitting area layer 5 is the light-emitting area of the LED, and the color of the light is determined by the material of the active area.
[0084] P-type ohmic contact layer...
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