Supercharge Your Innovation With Domain-Expert AI Agents!

Calibration method of ion implantation concentration

A technology of ion implantation and calibration methods, applied in special data processing applications, instruments, electrical digital data processing, etc., to achieve the effect of improving efficiency and ensuring accuracy

Active Publication Date: 2017-07-11
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method does not actually involve the method of extracting simulation parameters, and does not involve the influence of various instantaneous parameters on the distribution of implanted ions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Calibration method of ion implantation concentration
  • Calibration method of ion implantation concentration
  • Calibration method of ion implantation concentration

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The method for calibrating the ion implantation concentration of the present invention will be described in more detail below in conjunction with a schematic diagram, wherein a preferred embodiment of the present invention is represented, and it should be understood that those skilled in the art can modify the present invention described here and still realize the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0023] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for calibrating ion implanting concentration. The method includes acquiring measured curves of secondary ion mass spectroscopy; setting an ion implanting model which is formed through linear adding of two mutually-independent Pearson functions and limited by multiple instantaneous parameters; adjusting the instantaneous parameters respectively to enable the model to coincide with the measured curves so as to acquire an optimal instantaneous parameter set. By the method, various instantaneous parameters of the ion implanting model during correct calibration can be accurately extracted, and production quality and process research and development efficiency can be effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for calibrating ion implantation concentration. Background technique [0002] Modern semiconductor manufacturing processes have moved towards extremely small dimensions. Under the guidance of Moore's Law, the critical dimensions of chips are getting smaller and smaller. Recently, Intel's 14nm process chips have been tested and can be used. Under such a small size, semiconductor MOS devices have serious short-channel effects, and some special ion implantation is required to suppress short-channel effects, such as Halo implantation. As a main method of doping impurities into semiconductors, ion implantation has an increasingly important influence on the electrical characteristics of devices. Therefore, it is necessary to ensure the accuracy and precision in the ion implantation process. [0003] In compositional analysis, the surface can be bombarded with an ion ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 顾经纶颜丙勇
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com