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Methods and systems for providing magnetic tunnel junction elements with easy cone anisotropy

An anisotropic, magnetically anisotropic technology, applied in the field of magnetic junctions, that can solve problems such as limited, reduced soft failure rate, scalability energy consumption and/or adverse effects of thermal stability

Active Publication Date: 2018-04-20
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these conventional schemes are limited in their ability to reduce soft failure rates while maintaining other properties
For example, scalability, energy consumption, and / or thermal stability can be adversely affected by these conventional approaches

Method used

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  • Methods and systems for providing magnetic tunnel junction elements with easy cone anisotropy
  • Methods and systems for providing magnetic tunnel junction elements with easy cone anisotropy
  • Methods and systems for providing magnetic tunnel junction elements with easy cone anisotropy

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Embodiment Construction

[0030] Illustrative embodiments relate to magnetic junctions that may be used in magnetic devices such as magnetic memories, and devices using such magnetic junctions. The following description is given to enable a person of ordinary skill in the art to make and use the present invention, and is provided in the documents of the patent application and its requisite documents. Various modifications to the illustrative embodiments will be readily apparent, as well as the general principles and features described herein. The illustrative embodiments have been described primarily in terms of specific methods and systems given in specific implementations. However, the methods and systems can operate effectively in other implementations. Phrases such as "an illustrative embodiment," "one embodiment," and "another embodiment" can refer to the same or different embodiments as well as multiple embodiments. Embodiments will be described in relation to systems and / or devices having spec...

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Abstract

The present invention describes methods and systems for providing magnetic tunnel junction elements with easy-to-cone anisotropy that can be used in magnetic devices. The magnetic junction includes: a pinned layer, a non-magnetic spacer layer and a free layer. The nonmagnetic spacer layer is located between the pinned layer and the free layer. The free layer has magnetic anisotropy, at least a part of which is biaxial anisotropy. The magnetic structure is configured such that the free layer is capable of switching between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation-in-part of U.S. Patent Application Serial No. 12 / 854,628, entitled "Methods and Systems for Providing Magnetic Tunnel Junction Elements Having Biaxial Anisotropy," assigned to the assignee of the present application, hereby This application is incorporated herein by reference. [0003] government rights [0004] This invention was made with US Government support under License / Contract No. HR0011-09-C-0023 awarded by DARPA. The US Government reserves certain rights in this invention. Background technique [0005] Magnetic memory, especially Magnetic Random Access Memory (MRAM), has attracted increasing attention due to its potential for high read / write speed during operation, excellent endurance, non-volatility, and low power consumption. focus on. MRAM is capable of storing information using a magnetic material as an information recording medium. One type of MRAM is spin transfer t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08G11C11/16H10N50/10H10N50/80
CPCG11C11/161G11C11/1675H10N50/80H10N50/85H10N50/10
Inventor 德米托·阿帕利科夫威廉·H·布特勒
Owner SAMSUNG ELECTRONICS CO LTD
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