Per unit multi-bit storage device

A multi-bit per unit, storage device technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve the problems of slow write operation speed, high voltage required for write operation and erase operation, and achieve fast write operation, Effects of reduced power consumption and high speed

Active Publication Date: 2014-07-23
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcoming of the prior art, the purpose of the present invention is to provide a multi-bit storage device per unit, which is used to solve the problem that the write operation speed of the multi-bit storage device in the prior art is relatively slow, and the write operation and the erasing operation require high voltage problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Per unit multi-bit storage device
  • Per unit multi-bit storage device
  • Per unit multi-bit storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0101] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0102] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. On the other hand, when an element is referred to as being "directly connected" or "directly coupled to" another element, there are no intervening elements present.

[0103] Unless otherwise defined, all terms (in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a per unit multi-bit storage device which comprises a storage cell array, a row address decoding module, a column address decoding module, a reading / writing control module, a plurality of first word lines and a plurality of first bit lines. According to the storage device disclosed by the invention, a semi-floating gate transistor with an embedded tunneling field-effect tube serves as a storage unit for data storage; on one hand, writing operation at relatively high speed can be realized through a band-to-band tunneling property of a tunneling diode, and on the other hand, threshold voltage of the transistor is controlled in a segmented manner, thus realizing per unit multi-bit storage.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a multi-bit storage device per unit. Background technique [0002] The data stored in random access memory (SRAM and DRAM) will be lost after power off, and it can only encode two data bits of "0" and "1", which cannot realize the storage of multiple bits per unit. Then people design and In addition to the development of non-volatile memory, such as flash memory, it can not only store data when power is off, but also realize multi-bit encoding, and has a high degree of integration. [0003] A memory cell of a flash memory may include an electrically isolated floating gate, source and drain regions on a substrate on first and second sides of the floating gate, respectively, and a gate configured to control the floating gate. the control grid. Typically, the threshold voltage of a memory cell of a flash memory depends on the amount of charge stored in the floating gate. Data...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/1673G11C11/1675
Inventor 汪辉施琛田犁章琦汪宁方娜封松林
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap