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A self-driven high-speed Schottky junction near-infrared photodetector and preparation method thereof
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An electrical detector, infrared light technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effects of environmental protection, concise preparation process, and simple structure
Inactive Publication Date: 2016-03-30
HEFEI UNIV OF TECH
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Problems solved by technology
But so far, no near-infrared photodetector based on graphene / passivation layer / gallium arsenide has been reported.
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Embodiment 1
[0041] Such as figure 1As shown, the device structure of the self-driven high-speed Schottky junction near-infrared photodetector in the present embodiment is as follows: the n-type GaAs substrate 2 is used as the base region of the near-infrared detector, and the back surface of the n-type GaAs substrate 2 (non-polished surface) is vapor-deposited with n-type GaAs base electrode 1; a passivation layer 3 is vapor-deposited on the front (polished surface) of n-type GaAs substrate 2, and the boundary of passivation layer 3 does not exceed the boundary of n-type GaAs substrate 2; An insulating layer 4 is evaporated on the surface of the chemical layer 3. In order to ensure the contact effect between the graphene and the passivation layer, the area of the insulating layer 4 is 1 / 2 to 2 / 3 of the area of the passivation layer 3, and the boundary of the insulating layer 4 does not exceed The boundary of the passivation layer 3; on the insulating layer 4, a graphene electrode 5 i...
Embodiment 2
[0058] This embodiment adopts the same preparation method as Example 1, the difference is that the graphene adopts single-layer graphene, the thickness of the passivation layer used is respectively 0nm and 6nm, and the corresponding samples are respectively named as sample 4 and sample 5.
[0059] Single-layer graphene is synthesized by chemical vapor deposition in a dual-temperature zone tube furnace, and the specific steps are as follows:
[0060] First put two pieces of 7cm×7cm, 25 micron thick copper foil into the double-temperature zone tube furnace, place the two pieces of copper foil at the center of the thermocouple, pass in a standard atmospheric pressure of hydrogen as a protective gas, and then put the copper Heat the foil from room temperature to 1005°C (30min), the temperature required for copper foil treatment, and maintain this temperature for 1h. After 1 hour, methane and hydrogen are introduced, methane is 5 sccm, hydrogen is 100 sccm, ventilation is for 6 min...
Embodiment 3
[0063] This embodiment adopts the same preparation method as sample 2 in embodiment 1, the difference is that the n-type GaAs base electrode 1 adopts an Ag / Sn alloy electrode with a thickness of 200 nm, and the graphene electrode 5 adopts Au with a thickness of 50 nm.
[0064] After testing, the replacement of electrodes has basically no effect on the performance of the device, which is basically consistent with the data measured in sample 2.
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Abstract
The invention discloses a self-driven high-speed schottky junction near-infrared photoelectric detector and a manufacturing method of the detector. The manufacturing method is characterized by comprising the steps that an ultrathin passivation layer covers an n-type GaAs substrate, graphene is transferred to the n-type GaAs substrate covered with the passivation layer, a photodiode based on the graphene / the passivation layer / the n-type GaAs schottky junction is obtained, then photodiode is externally connected through an electrode, and the self-driven high-speed schottky junction near-infrared photoelectric detector can be manufactured. According to the method, the graphene with the quite high transmittance is used in the near-infrared photoelectric detector, the light transmittance of light is increased, and responsivity of the light is improved. The ultrathin passivation layer is added between the graphene and the n-type GaAs, dark current noise is reduced, the response time is greatly shortened, and the near-infrared photoelectric detector has the advantages of being simple in structure, lower in cost, high in response speed, large in switch ratio, low in dark current noise, high in detection rate and the like and has the great market utilization potentiality.
Description
technical field [0001] The invention belongs to the technical field of semiconductor device applications, and in particular relates to a self-driven high-speed Schottky near-infrared photodetector and a preparation method thereof. Background technique [0002] Infrared detectors are semiconductor devices that can receive optical signals in the infrared band and convert them into electrical signals. Infrared detectors are widely used in military affairs, meteorology, industry, agriculture and forestry, environmental science, public security and medical diagnosis. [0003] The blackened mercury thermometer used by Herschel in 1800 when he discovered the infrared rays in the solar spectrum was the earliest infrared detector. With the development of experiments and theories, new infrared detection devices continue to emerge. The birth of infrared photodetectors can be traced back to 1873, when W.Smith of England discovered that selenium (Se) had a photoconductive effect. The m...
Claims
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