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A kind of preparation method of zinc oxide-based p-type material
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A zinc oxide-based, p-type technology, used in final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve problems such as poor stability and low repeatability, and achieve good temperature stability and high repeatability. , the effect of improving the ionization rate
Inactive Publication Date: 2016-06-01
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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[0006] The purpose of the present invention is to provide a method for preparing zinc oxide-based p-type materials in order to solve the problems of poor stability and low repeatability of the existing preparation methods of zinc oxide-based p-type materials
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[0023] The invention provides a method for preparing a zinc oxide-based p-type material, such as figure 1 As shown, the method includes:
[0024] Prepare a gradient layer 103 on the base layer 102;
[0025] Prepare a cover layer 104 on the gradient layer 103;
[0026] The base layer 102 is a ZnO material with a Zn polar surface, the thickness of the base layer is greater than 300nm, preferably 1-3 μm, and it must have a complete structure, and its crystal lattice should be strong enough for the graded-MgZnO layer The crystal lattice creates confinement, which creates stress in the graded layer, which in turn produces piezoelectric polarization aligned with the direction of the spontaneous polarization;
[0027] The graded layer 103 has a composition graded structure, which is ZnO / Mg from bottom to top δ Zn 1-δ O / Mg 2δ Zn 1-2δ O / … / Mg (n-1)δ Zn 1-(n-1)δ O / Mg nδ Zn 1-nδ O(δ→0, n is a natural number); abbreviated as graded-MgZnO, δ is a value close to 0 between 0 and 1 t...
Embodiment 1
[0035] The specific implementation method of preparing polarization-induced p-type ZnO material by MOCVD
[0036] Zinc source adopts diethyl zinc, magnesium source adopts dimethyl dimagnesocene, oxygen source adopts oxygen, zinc source and magnesium source are contained in bubble bottles, and the active ingredients in the bubble bottles are carried by carrier gas (nitrogen) It can be seen that the organic source pipeline of the MOCVD system in this embodiment is a standard pipeline, so the amount of the source passed into the reaction chamber is related to the temperature of the source and the flow rate of the carrier gas (the higher the temperature of the source, the greater the flow rate of the carrier gas, the greater the flow rate of the carrier gas through the greater the amount of source that enters the reaction chamber).
[0037] Step 1, substrate preparation: clean the C-plane sapphire substrate of oxygen polarity, and place it in the MOCVD reaction chamber (correspond...
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Abstract
The invention provides a method for manufacturing zinc-oxide-based p-type materials, and belongs to the technical field of semiconductor material growing. The method includes the steps that a gradient layer is manufactured on a base layer; a covering layer is manufactured on the gradient layer; the base layer is made of ZnO materials with the Zn polarity surfaces, wherein the thickness of the base layer is larger than 300 nm; the gradient layer is of a component gradient structure, the component gradient structure comprises ZnO / MgdeltaZn1-deltaO / Mg2deltaZn1-2deltaO / ... / Mg(n-1)deltaZn1-(n-1)deltaO / MgndeltaZn1-ndeltaO from bottom to top, wherein delta->zero, the n is a natural number, and the thickness of the gradient layer is smaller than or equal to 1 micrometer; material components of the covering layer are coincident with material components of the upper surface of the gradient layer and are MgndeltaZn1-ndeltaO, wherein the ndelta is smaller than or equal to 0.6 and larger than or equal to 0.2, and the thickness of the covering layer is larger than or equal to 5 nm. The zinc-oxide-based p-type materials manufactured with the method have the good temperature stability.
Description
technical field [0001] The invention belongs to the technical field of semiconductor material growth, and in particular relates to a preparation method of a zinc oxide-based p-type material. Background technique [0002] Wide bandgap semiconductors are called third-generation semiconductors because of their broad application prospects in solid-state lighting, short-wavelength semiconductor lasers, and ultraviolet light detection. ZnO is one of the representatives of wide bandgap semiconductor materials. It is a uniaxially symmetric direct bandgap semiconductor. The warm ionization energy (26meV) can ensure efficient exciton luminescence and low-threshold stimulated emission at room temperature. Therefore, ZnO is considered to be an ideal material for short-wavelength light-emitting diodes (LEDs), especially lasers (LDs) and other optoelectronic devices. Compared with other wide bandgap semiconductor materials, ZnO also has abundant resources and low cost of raw materials; ...
Claims
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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/18
CPCH01L31/0296H01L31/1828Y02P70/50
Inventor 王双鹏单崇新张振中李炳辉李科学申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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