Preparation method of CuInS2 monocrystals and preparation device of CuInS2 monocrystals

Abstract

The invention discloses a preparation method of CuInS2 monocrystals, comprising the following steps: uniformly mixing high-purity raw material powders Cu, In and S; vacuum packaging the mixed high-purity raw material powders into a reactor, and preparing a CuInS2 polycrystalline ingot by a single-temperature rocking-furnace mixed crystal method to be used as a raw material for growth of follow-up seeds and monocrystals, preparing a small CuInS2 monocrystalline ingot by a Bridgman method to be used as seeds; and finally growing large CuInS2 monocrystalline ingot by a magnetic field and a seed-assisted travelling heat method. The invention also discloses a preparation device of CuInS2 monocrystals. The preparation device is composed of a reaction vessel, a vertical furnace and an applied magnetic field system. According to the invention, the problem that growth rate is slow when CuInS2 crystals are prepared by a conventional travelling heat method is improved; growth rate of crystals and utilization rate of crystals are raised; preparation technological problems of large-diameter monocrystals CuInS2 are solved effectively; and theoretical and practical foundations are provided for preparation of CuInS2 thin film solar cells with excellent performance.

Description

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AI Technical Summary

Benefits of technology

This new technology allows for faster production of larger sizes (up to 1 meter) of CIS materials while maintaining their quality. It involves magnetized moving hot air bags that mix crude copper indium selenide or other sources together before being placed on top of another layer called an absorption layer. By doing this, it can create more efficient light conversion from sunlight compared to traditional methods like cathode ray tube displays.

Problems solved by technology

This patents discusses different ways to produce highly pure CIS (CuInSe2) films that could improve photovoltage effectiveness without containing heavy metals or environmental concerns associated therewith. However current techniques used for making copper indium selenide (CIAS) film involve expensive equipment like vacuum evaporation systems, chemical vapor deposition processes, atomic force microscopy, laser ablation, thermal diffusion bonding, ion implantations, and other complex manufacturing steps. Therefore, an improved technique called liquid phase transfer has been developed over time due to better understanding of how to efficiently create stable and consistently good quality nanoclusters suitable for various applications involving light harvesting devices.

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