Multi-quantum-well structure for photoelectric device

Abstract

The invention discloses a novel multi-quantum-well structure for a photoelectric device. The multi-quantum-well structure is characterized in that detail optimization on the interior of quantum wells is not focused on, overall matching and optimization design on well layer thickness and barrier layers of the quantum wells are emphasized, and overall efficiency can be improved greatly. The multi-quantum-well structure comprises a plurality of periods of barrier layer structures and well layer structures, the barrier layer structures are overall thick in the front portion and thin in the rear portion, and the well layer structures are overall thin in the front portion and thick in the rear portion. Compared with the prior art, a new structural layer is not added, and therefore source material cost is not increased, and the effect of improving brightness is achieved only through the simple thickness deign and matching of well layers and barrier layers of the quantum wells.

Description

technical field [0001] The invention belongs to the field of optoelectronic device design and relates to a method for designing a multi-quantum well structure used in optoelectronic devices. Background technique [0002] In the current design of optoelectronic devices, the introduction of multiple quantum well structures has greatly improved the internal quantum efficiency of optoelectronic devices and has been widely used. The design of the multi-quantum well structure is mainly to improve the recombination efficiency. In theory, the more quantum wells, the higher the recombination efficiency. However, due to the limitation that the growth quality of quantum wells will gradually deteriorate with the increase in the number of quantum wells, the number of quantum wells must also be strict control. For the quantum well layer thickness design of the quantum well structure, the thinner the quantum well layer, the lower the ability to capture electron holes, resulting in a lower...

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Problems solved by technology

This design also has a certain effect, but it is only for the design of the first few cycles, but because the light-emitting recombination area of ​​the actual quantum well structure is concentrated in the quantum well area behind, the overall effect is not very obvious

[0007] Based on the above, everyone gradually has a clearer understanding of the design of the barrier layer, but the design of the quantum well layer is still in the design of the first few cycles, and the overall consideration and overall design of the quantum well and quantum barrier structure The cases of many quantum wells are rarely designed, and the design of many quantum wells also stays in the composition control inside the quantum well, the flow control or the increase of the covering structure, etc., such as patent documents CN102832306A, CN102427103A, etc.; It has achieved a certain effect, but it has not achieved the optimal effect in the overall matching, reflecting the great significance in the industry, and further performance improvement is still needed

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