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A kind of synthetic method of iib-via group compound powder

A synthesis method and compound technology, applied in selenium/tellurium compounds, chemical instruments and methods, binary selenium/tellurium compounds, etc., can solve problems such as difficult rapid release, high reaction heat, unsafe reaction process, etc., to reduce production Effects of cost, uniform particle size, and simplified process

Active Publication Date: 2016-04-06
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the heat of reaction in the synthesis process is very large and difficult to release quickly, so the reaction process is unsafe and prone to explosion accidents

Method used

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  • A kind of synthetic method of iib-via group compound powder
  • A kind of synthetic method of iib-via group compound powder
  • A kind of synthetic method of iib-via group compound powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The present embodiment uses mobile resistance heating furnace, and the length of its heating zone is 20cm, and process step is as follows successively:

[0033](1) Mix tellurium powder and cadmium powder with an average particle size of 20 μm and a purity of 5N according to a molar ratio of 1:1 and mix them uniformly. The total mass of the ingredients is 300 g, and then spread the uniformly mixed powders in the crucible 1 , then put the crucible 1 into the tubular reaction chamber 2 and close and seal the tubular reaction chamber;

[0034] (2) vacuumize the tubular reaction chamber 2 to 1×10 -3 Pa, and then complete the cleaning of the tubular reaction chamber 2 through the operation cycle of charging with argon-evacuation for 3 times (the cycle operation of filling with argon-evacuation: filling the tubular reaction chamber 2 with argon with a purity of 5N Gas to normal pressure, then vacuumize the tubular reaction chamber 2 to 1×10 -3 Pa, then fill the tubular react...

Embodiment 2

[0040] This embodiment uses a mobile high-frequency induction heating furnace, the length of its heating zone is 5cm, and the process steps are as follows:

[0041] (1) Mix tellurium powder and cadmium powder with an average particle size of 50 μm and a purity of 5N according to a molar ratio of 1:1.1 and mix them uniformly. The total mass of the ingredients is 500 g, and then spread the uniformly mixed powders in the crucible 1 , then put the crucible 1 into the tubular reaction chamber 2 and close and seal the tubular reaction chamber;

[0042] (2) Clean the tubular reaction chamber 2 to remove the impurity gas in the tubular reaction chamber 2. The cleaning method is similar to that of Example 1, except that the gas used is nitrogen with a purity of 5N. After the reaction chamber 2 is completed, fill the tubular reaction chamber 2 with nitrogen to adjust the pressure to 1×10 3 Pa;

[0043] (3) Move the mobile high-frequency induction heating furnace to the outside of the ...

Embodiment 3

[0047] This embodiment uses a mobile resistance heating furnace, the length of the heating zone is 10cm, and the process steps are as follows:

[0048] (1) Mix selenium powder and cadmium powder with an average particle size of 100 μm and a purity of 4N according to a molar ratio of 1:1.2 and mix them evenly. The total mass of the ingredients is 400 g, and then spread the evenly mixed powders in the crucible 1 , then put the crucible 1 into the tubular reaction chamber 2 and close and seal the tubular reaction chamber;

[0049] (2) The tubular reaction chamber 2 is cleaned to remove the impurity gas in the tubular reaction chamber 2, the cleaning method is similar to that of Example 1, the difference is that the tubular reaction chamber 2 is evacuated to 1 × 10 -4 Pa, the gas used is hydrogen with a purity of 5N, and the number of cycles is 2. After cleaning the tubular reaction chamber 2, fill the tubular reaction chamber 2 with hydrogen to adjust the pressure to 1×10 2 Pa; ...

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Abstract

The invention discloses a synthetic method of IIB-VIA group compound powder. The method comprises the steps of using VIA group non-metal powder and IIB group metal powder as raw materials; using a synthesizer comprising a crucible, a pipe type reaction chamber and a mobile heating furnace; paving the raw materials in the crucible; putting the crucible into the pipe type reaction chamber, and closing and sealing the pipe type reaction chamber; regulating the pressure intensity in the pipe type reaction chamber to be 1*10<2>-1*10<5>Pa by adopting a manner of introducing protective gas into the pipe type reaction chamber, or performing vacuum pumping and introducing the protective gas at the same time; controlling the mobile heating furnace to move at a rate of 5-20cm / min when the furnace temperature rises to 500-800 DEG C; completing the synthetic reaction of an IIB-VIA group compound when the mobile heating furnace moves from one outer side of the part section of the pipe type reaction chamber with the crucible to another outer side; then rising the furnace temperature of the mobile heating furnace to be 700-1000 DEG C, and enabling the mobile heating furnace to perform back-and-forth movement for 1-2 times on the part section of the pipe type reaction camber with the crucible, thus completing annealing treatment. The method is safe and simple in process, and the prepared IIB-VIA group compound powder is uniform in particle size.

Description

technical field [0001] The invention belongs to the technical field of IIB-VIA group compound powder synthesis, and relates to a method for synthesizing IIB-VIA group compound powder by using a mobile heating furnace to provide a high-temperature environment. Background technique [0002] Polycrystalline IIB-VIA group compound alloy powder is the key core material for preparing solar thin film cells. With the rapid development of the photovoltaic industry, the demand for IIB-VIA group compound powder raw materials is increasing rapidly at home and abroad. Obtaining high-purity, small-particle-size semiconductor high-purity IIB-VIA compound powder raw materials by controlling a reasonable preparation process, and continuous batch production is the key pursuit of the industrial production of semiconductor materials today. [0003] The patent with the application number CN201210401061.X discloses a high-temperature liquid-phase synthesis method of cadmium telluride powder. In ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04C01G11/02C01B19/00
Inventor 刘颖叶金文李小磊
Owner SICHUAN UNIV