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A Wet Erosion Chemical Transfer Method for Improving Graphene Surface Cleanliness

A technology of wet etching and chemical transfer, applied in chemical instruments and methods, inorganic chemistry, carbon compounds, etc., can solve the problems of introducing surface states, etc., and achieve the effect of improving the cleanliness

Active Publication Date: 2016-01-20
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of the defects of the prior art described above, the object of the present invention is to provide a wet chemical transfer method for improving the cleanliness of the graphene surface, which is used to solve the problem that organic colloids remain on the graphene surface and introduce surface states in the prior art

Method used

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  • A Wet Erosion Chemical Transfer Method for Improving Graphene Surface Cleanliness
  • A Wet Erosion Chemical Transfer Method for Improving Graphene Surface Cleanliness

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) A continuous graphene film first grown on a Cu catalytic substrate ( figure 1 (a) A metal film is deposited on the surface, the metal film is one or two, three or even seven alloys of Al, Zn, Fe, Co, Ni, Mo or Cu, and the thickness of the metal layer is 10-1000nm, the preferred thickness of the Al film is 30-100nm; then the preferred surface deposition of the metal Al film layer is 100-500nm thick PMMA layer, the preferred thickness is 150-250nm; a layer of 200nm is spin-coated on the surface of the Al film Thickness of polymethyl methacrylate (PMMA) (such as figure 1 (b) shown);

[0024] (2) Put the PMMA / Al / graphene / Cu sample into FeCl 3 On the surface of the etching solution, PMMA faces upwards. After Cu is completely etched away, transfer the PMMA / Al / graphene combination to Si / SiO 2 On the target substrate (e.g. figure 1 (c) shown);

[0025] (3) Next, PMMA / Al / graphene / Si / SiO 2 The conjugate is immersed in 40-70℃ acetone solution for 1-3 hours to remove PMMA (such as f...

Embodiment 2

[0029] (1) First, deposit a 30nm thick Al film on the surface of the continuous graphene film grown on the Ni catalyst substrate; then spin-coat a 200nm thick polymethylmethacrylate (PMMA) on the upper surface of the Al film;

[0030] (2) Put the PMMA / Al / graphene / Cu sample into FeCl 3 On the surface of the etching solution, the PMMA side is facing upwards. After the Cu is completely etched away, transfer the PMMA / Al / graphene sample to the target substrate Si / SiO 2 On the substrate

[0031] (3) The PMMA / Al / graphene / Si / SiO 2 The sample is immersed in an acetone solution at 50°C for 2 hours to remove PMMA;

[0032] (4) Finally, the Al / graphene / Si / SiO 2 Sample is immersed in HNO 3 Or FeCl 3 The metal Al is removed from the solution to obtain the transferred continuous graphene film. The result is figure 2 (b) Shown.

Embodiment 3

[0034] (1) Depositing a 30nm thick Al film on the surface of the single crystal graphene grown on the Cu catalytic substrate; then spin-coating a 200nm thick polymethylmethacrylate (PMMA) on the upper surface of the Al film;

[0035] (2) Put the PMMA / Al / graphene / Cu sample into FeCl 3 On the surface of the etching solution, the PMMA side is facing up, after Cu is completely corroded away, transfer the PMMA / Al / graphene sample to Si / SiO 2 On the substrate

[0036] (3) The PMMA / Al / graphene / Si / SiO 2 The sample is immersed in an acetone solution at 50°C for 2 hours to remove PMMA;

[0037] (4) Finally, the Al / graphene / Si / SiO 2 Sample is immersed in HNO 3 Or FeCl 3 The metal Al is removed from the solution to obtain the transferred continuous graphene film. The result is figure 2 (b) Shown.

[0038] Experimental results prove that the method of the present invention is effective and can improve the cleanliness of the graphene surface.

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Abstract

The invention relates to a wet etching chemical transfer method for enhancing surface cleanliness of graphene, which is characterized by comprising the following steps: depositing a metal layer on a metal-substrate-graphene combination, coating an organic colloid layer on the upper surface of the metal, putting in an etching solution to obtain an organic colloid-metal layer-graphene-layer combination, transferring onto a target substrate, removing the organic colloid, and putting the metal-graphene combination into the etching solution until the metal layer is removed, thereby obtaining the transferred graphene. Compared with the traditional wet etching chemical transfer method, the method provided by the invention has the following advantages: the metal layer is deposited on the graphene surface before spin coating of the organic colloid to prevent the direct contact between the graphene and organic colloid, thereby effectively avoiding the residue of the organic colloid on the graphene surface after transfer.

Description

Technical field [0001] The invention relates to a wet corrosion chemical transfer method for improving the cleanliness of the graphene surface. It belongs to the field of graphene transfer technology. Background technique [0002] In recent years, due to the advantages of high yield and large growth area, the research on the growth of graphene on metal catalytic substrates by chemical vapor deposition (CVD) has developed rapidly, regardless of whether it is grown on Cu or Ni catalytic substrates. Transfer to an insulating substrate can realize further application. The currently commonly used transfer method is the wet chemical transfer method. The advantage of this method is that it can transfer a large area of ​​complete graphene. The specific operation is to spin-coat a layer of organic colloid support layer on the top surface of the graphene, which acts as a metal catalytic substrate. After being corroded, the splitting of the graphene crystal chip is avoided. However, due ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04C01B32/194
Inventor 陈志蓥于广辉张燕辉隋妍萍张浩然张亚欠汤春苗朱博李晓良
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI