Unlock instant, AI-driven research and patent intelligence for your innovation.

Block type doped solar cells

A solar cell, block-type technology, applied in the field of solar cells, can solve problems such as output power reduction

Active Publication Date: 2016-08-24
UNITED RENEWABLE ENERGY CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when the solar cell is irradiated with light, the electrons and hole pairs generated by the leakage current leak through the leakage current, which reduces the overall output power.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Block type doped solar cells
  • Block type doped solar cells
  • Block type doped solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] Below in conjunction with accompanying drawing, structural principle and working principle of the present invention are specifically described:

[0048] The problem of the present invention is that if the doped layer is surrounded by a semiconductor substrate when cutting solar energy, the semiconductor substrate will be cut directly when cutting, and there is no problem on the junction between N+ and P-type edges, so No leakage current will be generated due to the problem of the edge junction, which is the desired effect of the present invention.

[0049] Next, please refer to this invention image 3A schematic diagram of a first embodiment of a block-type doped solar cell, the block-type doped solar cell includes: a semiconductor substrate 10 , an anti-reflection layer 30 , a plurality of front electrodes 40 , a P+ doped layer 50 and a back electrode layer 60 . The semiconductor substrate 10 has a first surface, and a plurality of block doped layers 24 are arranged u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a block type doped solar cell, which includes: a semiconductor substrate, an anti-reflection layer, a plurality of front electrodes and back electrode layers. The semiconductor substrate has a first surface, and a plurality of block doping layers are arranged under the first surface, and these block doping layers are spaced apart from each other. The anti-reflection layer is disposed on the block doping layer and the semiconductor substrate. The front electrode penetrates the anti-reflection layer and is disposed on the block doping layer. The back electrode layer is disposed on the second surface of the semiconductor substrate.

Description

technical field [0001] The invention relates to a solar cell, in particular to a block-type doped solar cell, strip-type and block-type solar cells. Background technique [0002] Due to the shortage of petrochemical energy, people's awareness of the importance of environmental protection has increased. Therefore, in recent years, people have been actively researching and developing technologies related to alternative energy and renewable energy, hoping to reduce the current human dependence on petrochemical energy and the impact on the environment when using petrochemical energy. the impact. Among the many alternative energy and renewable energy technologies, solar cells have attracted the most attention. The main reason is that solar cells can directly convert solar energy into electrical energy, and no harmful substances such as carbon dioxide or nitride will be produced during the power generation process, and will not pollute the environment. [0003] Generally speakin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/068
CPCH01L31/03529H01L31/068Y02E10/547H01L31/048
Inventor 刘承维陈伟铭王瑞麟
Owner UNITED RENEWABLE ENERGY CO LTD