AlGaN film grown on Si substrate, preparation method and application thereof

A technology for substrates and thin films is applied in the field of metal organic chemical vapor deposition combined with pulsed laser deposition to synthesize films. and thermal mismatch amplification, the effect of reducing manufacturing cost and shortening nucleation time

Active Publication Date: 2014-09-10
广州市众拓光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the common method of preparing AlGaN thin film is chemical vapor deposition process, which requires heating the substrate to a higher temperature, but the higher temperature may cause damage to the substrate material; at the same time, the Si on the substrate surface at high temperature It will diffuse into the epitaxial material and form Si-Ga-N alloy with Ga, causing the interface of AlGaN film to be corroded
In

Method used

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  • AlGaN film grown on Si substrate, preparation method and application thereof
  • AlGaN film grown on Si substrate, preparation method and application thereof
  • AlGaN film grown on Si substrate, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Reference figure 1 The AlGaN film grown on the Si substrate of the present invention includes the Si substrate 11 and the AlGaN film 12.

[0030] The AlGaN film grown on the Si substrate is prepared by the following method:

[0031] (1) Selection of substrate and crystal orientation: using a Si substrate, select a crystal orientation of 0.5° from the (111) plane to the (100) direction;

[0032] (2) Using metal organic chemical vapor deposition process to grow Al atomic layer, the process conditions are: substrate temperature is 960℃, reaction chamber pressure is 50torr, TMAl is introduced, flow rate is 250sccm, two to three layers of Al atomic layer are laid to isolate Si substrate and NH 3 Contact to prevent the formation of SiN x ;

[0033] (3) Nitriding the Al atomic layer, the process conditions are: the substrate temperature is 860°C, the reaction chamber pressure is 100torr, and NH is introduced 3 , The flow rate is 5slm, the nitriding time is 6min;

[0034] (4) Using puls...

Embodiment 2

[0036] On the basis of Example 1, the AlGaN thin film grown on the Si substrate was prepared by the following method:

[0037] (1) Selection of substrate and crystal orientation: using a Si substrate, select a crystal orientation of 0.5° from the (111) plane to the (100) direction;

[0038] (2) A metal-organic chemical vapor deposition process is used to grow the Al atomic layer. The process conditions are: the substrate temperature is 860°C, the reaction chamber pressure is 100 torr, TMAl is introduced, the flow rate is 200 sccm, and two to three Al atomic layers are laid to isolate Si substrate and NH 3 Contact to prevent the formation of SiN x ;

[0039] (3) Nitriding treatment is performed on the Al atomic layer, the process conditions are: the substrate temperature is 960℃, the reaction chamber pressure is 50torr, and NH is introduced. 3 , The flow rate is 15slm, the nitriding time is 3min;

[0040] (4) Using pulsed laser deposition process to grow AlGaN thin film, the process co...

Embodiment 3

[0042] This embodiment is modified on the basis of embodiment 1. The difference is: after the substrate and crystal orientation are selected, and before the Al atomic layer is grown, the substrate is subjected to surface cleaning and annealing treatment steps in sequence. The specific method as follows:

[0043] Surface cleaning treatment: the Si substrate is first ultrasonically cleaned in acetone solution, then ultrasonically cleaned in deionized water; then ultrasonically cleaned in isoacetone solution; then ultrasonically cleaned in hydrofluoric acid solution, and then deionized Soak in water; then soak the Si substrate in a mixed solution of sulfuric acid and hydrogen peroxide; finally soak the Si substrate in hydrofluoric acid, rinse with deionized water, and blow dry with nitrogen.

[0044] Annealing treatment: Place the substrate in an ultra-high vacuum growth chamber and bake it at 1000-1100°C for 5-15 minutes.

[0045] Reference figure 2 It can be seen from the X-ray surf...

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Abstract

The invention discloses an AlGaN film grown on an Si substrate, a preparation method and an application thereof. The AlGaN film grown on the Si substrate comprises an Si substrate body and an epitaxially grown film body on the Si substrate body; the crystal orientation of the Si is that the surface 111 deviates from 100 by 0.5 to 1 degree. The AlGaN film grown on the Si substrate is prepared through growing the AlGaN film through a pulsed laser deposition technique, growing an Al atom layer through a metal organic chemical vapor deposition technique, carrying out nitrogen treatment on the Al atom layer, selecting the substrate and the crystal orientation and the like. The AlGaN film is used for a photoelectric detector or an LED device. The AlGaN film grown on the Si substrate solves the crack problem of a GaN film on the Si substrate, enables the AlGaN film quality, purity and interface property to be improved and enables the technique cost to be lowered.

Description

Technical field [0001] The invention relates to the technical field of film synthesis by a metal-organic chemical vapor deposition method combined with a pulsed laser deposition method, in particular to an AlGaN film grown on a Si substrate and a preparation method and application thereof. Background technique [0002] Si is a common substrate for growing GaN epitaxial wafers. Compared with traditional sapphire substrates, Si has many advantages, such as low cost and large size. Therefore, it has great potential in reducing LED costs and promoting product applications. However, due to the large lattice mismatch (about 17%) and huge thermal mismatch (about 54%) between GaN and Si, it is difficult to grow high-quality GaN films on Si substrates. In addition, epitaxial materials are prone to microcracks, which makes it difficult to meet the quality requirements of devices. [0003] AlGaN is a III-V group compound, and its applications are mainly reflected in the following aspects: pi...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/12C30B25/22C30B29/40
CPCH01L21/02381H01L21/0254H01L21/0262H01L29/06H01L33/0066H01L33/0075H01L33/12
Inventor 李国强
Owner 广州市众拓光电科技有限公司
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