47results about How to "Reduced nucleation time" patented technology

The invention relates to a natural gas hydrate, and particularly to an accelerant for strengthening the generation of a gas hydrate. The accelerant for generating the gas hydrate, provided by the invention, is prepared by compounding of a novel anion gemini surfactant and solid activated carbon particles with a strong heat transmission effect at a certain mass ratio; a liquid mixture is formed after the high-speed mechanical agitation and the ultrasonic dispersion are conducted on the reagent, and the essence is that solid particles with a high heat-conducting property are wrapped in the gemini surfactant, so that nanometer solid particles cannot be agglomerated easily, and the mixing solution with uniformly dispersed solutes is formed, and the mixing solution is free of sediment; the application temperature ranges from 0 DEG C to 10 DEG C, the pressure ranges from 0 MPa to 12 MPa, and the time of hydrate generation induction period ranges from 1 min to 3 min; compared with the pure water system, the generation speed rate of the hydrate is increased by 140%-200%.

The invention relates to the technical field of semiconductor photovoltaic materials and semiconductor devices, and discloses a preparation method for micron-sized spherical CZTSSe monocrystalline particles. Metal simple substance powder, sulfide powder, selenide powder, elemental sulfur powder, elemental selenium powder, flux, Cu2ZnSnS4 nanoparticles and as the like are combined as reaction raw materials, and are ground and mixed according to the designed formula. The powder mixture is vacuum-encapsulated into a quartz reactor; the quartz reactor is kept at the temperature of 750 DEG C to 1000 DEG C for 48-120 hours, and then is quickly cooled to the room temperature; and samples are taken out, cleaned and dried to obtain the CZTSSe monocrystalline particles. The size of the prepared monocrystalline particles can be regulated and controlled by utilizing recrystallization temperature and time, and the components of the particles can be effectively regulated within a certain range through the molar ratio of the elements in a precursor. The prepared monocrystalline particles are uniform and controllable in size, and are better than the monocrystalline particles prepared by the traditional method in performance.

The invention relates to the technical field of semiconductor photoelectric materials and devices and discloses a micron-sized spherical copper-zinc-tin-sulfur monocrystal particle preparation method. The method includes: grinding and mixing different combinations of metal powder, sulfides, elemental sulfur powder, fluxing agents, copper-zinc-tin-sulfur nano particles and the like according to designed proportions, packaging mixed powder in a quartz reaction vessel in a vacuum manner, keeping the quartz reaction vessel at the temperature of 750-1000 DEG C for 48-120h, and quickly cooling the quartz reaction vessel to the room temperature; taking out a sample, and washing and drying to obtain copper-zinc-tin-sulfur monocrystal particles; the prepared monocrystal particles are adjustable in size by means of recrystallization temperature and time, and ingredients of the particles can be effectively regulated within a certain range through a molar ratio of elements in a precursor. The prepared monocrystal particles are uniform in ingredient and controllable in size so as to be superior to those prepared according to traditional methods.

The invention discloses a system for storing and transporting natural gas based on a hydrate method and a use method of the system, relates to the field of natural gas storage and transportation, andparticularly relates to a system for storing and transporting the natural gas based on the hydrate method and the use method of the system. Specifically the system is a system for carrying out hydratesynthesis, storage and decomposition reutilization on the natural gas by the hydrate method. The system comprises a hydrate slurry synthesis system, a low-temperature hydrate generation system, a transmission system, a hydrate underground low-temperature storage reservoir and a hydrate decomposition system. According to the system, natural gas and configuration water are used for synthesize hydrate slurry through the mode comprising stepped distribution of gas injection ports, pressure-fluctuation-type injection of the natural gas, and forward and reverse vortex-type stirring; and the hydrateslurry and the natural generate a natural gas hydrate through spraying. The preparation method provided by the invention simple, the processes are few, and the problem of blockage in a water circulation loop is solved, so that the natural gas can be stored and transported in a solid form, and the storage and transportation mode is more flexible and convenient.

The invention discloses a novel hydrate dynamic inhibitor of a structural formula I as shown in the description. The inhibitor is high in inhibition activity, good in inhibition effect, small in amount and low in cost, is capable of effectively prolonging the nucleation time of hydrate and reducing the generation velocity of the hydrate with a low dosage concentration (0.5-2wt%) in a high supercooling degree environment, is applicable to coexistence systems of three phases of oil, gases and water or two phases of oil and water or two phases of gases and water, can be applied to inhibition of generation of hydrate in the oil-gas exploration, processing and conveying process, is not limited by supercooling degrees or application situations, and has wide application prospects.

The invention discloses a GaN thin film growing on a metal Al substrate and a preparing method and application thereof. The GaN thin film growing on the metal Al substrate comprises the Al substrate, an Al2O3 protecting layer growing on an epitaxy face which is a face (111) of the Al substrate and a GaN thin film layer growing on the Al2O3 protecting layer in an epitaxial mode. The crystal epitaxial orientation relationship of the Al2O3 protecting layer and the GaN thin film layer is GaN (0001)//Al2O3 (0001)//Al (111). Proper crystal orientation is selected, so that a high-quality GaN epitaxial thin film is obtained on the Al (111) substrate and is used for improving nitride device efficiency. The GaN thin film is mainly used as dielectric layer thin films of a sound wave resonator, a logic circuit, a light-emitting diode, an optoelectronic thin film device, a solar cell, a photodiode, a photoelectric detector, a laser device and the like.

The invention discloses a double-effect composite hydrate inhibitor which comprises hydroxylated morpholine ionic liquid, amino acid and water, wherein the structural formula of the hydroxylated morpholine ionic liquid is as shown in the specification. The composite hydrate inhibitor is high in conductivity, biodegradable, free from toxicity, environmentally friendly and efficient in inhibition performance and has double-effect inhibition performance of thermodynamics and dynamics, and hydrate formation can be effectively inhibited under low dosage concentration of 1wt%-5wt%. In the structural formula, R1 is C1-C4 alkyl substituent, R2 is ethoxyl, and X is tetrafluoroborate.

The invention discloses an electrical pulse treatment method for improving chalking resistance of an aluminum ferro silicon manganese alloy. The mass percentage of each chemical component in the aluminum ferro silicon manganese alloy is that 49-51% of Mn, 19-21% of Al, 17-20% of Si, 5-14% of Fe and the balance of impurity elements such as carbon. The alloy preparation process comprises the following steps of (1) weighing each raw material according to designed components; (2) adding each raw material to be smelted according to a designed sequence; (3) when all raw materials are melted, switching off an induction furnace power supply; and meanwhile, inserting two pure ferro electrodes connected with an electrical pulse power supply into a high temperature molten pool; and applying high-energy density pulse current to the interior of the molten pool; and (4) after 5-10 minutes of electrical pulse treatment, cooling the molten pool to obtain the aluminum ferro silicon manganese alloy. Theproduct obtained by the electrical pulse treatment method for improving the chalking resistance of the aluminum ferro silicon manganese alloy has the advantages of smaller grain size, compact alloy structure, stable structure, excellent chalking resistance and long alloy storage period. Requirements of a deoxidizing agent for steel making are met.

The invention discloses a fluorescent sericin metal nano-cluster and a preparation method and application thereof. The metal nano-cluster synthesized by taking sericin as a template is successfully prepared through a microwave radiation method. The preparation method comprises the following steps that firstly, a sericin aqueous solution is prepared, a HAuCl 4 aqueous solution is added into the sericin aqueous solution, and the mixed solution is uniformly mixed, wherein the mass ratio of the sericin to the HAuCl 4 is 25:1-25:10; and then NaOH is added to adjust the pH value of the mixed solution, and the mixed solution is put in a microwave reactor for reaction, wherein the microwave power is 500-900 W, and the reaction time is 1-20 min. According to the sericin metal nano-cluster preparedby the preparation method, the average particle size is 2.5 nm, the maximum excitation wavelength is 360 nm, the maximum emission wavelength is 480 nm, the stability is high, the biocompatibility is good, the light stability is high, the fluorescence is strong, the sensitivity is high, and the nano-cluster can be used as a probe to detect the content of Fe <3+> ions in a water environment or serumand can be served as a fluorescent probe to be applied to biological imaging research.

The invention belongs to the technical field of nano materials, and particularly relates to quantum dots and a preparation method thereof. The preparation method comprises the following steps: providing a group III cationic precursor and a ligand, wherein the group III cationic precursor comprises one or more metal halide precursors and one or more metal oxide precursors and/or one or more metal hydroxide precursors; dissolving the group III cationic precursor and the ligand in a solvent, and carrying out heating treatment under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution to a second temperature, then adding a group V anion precursor into the mixed solution, and carrying out a nucleation reaction to obtain a group III-V quantum dotnuclear solution. The preparation method is stable in technology, simple in process, low in cost and beneficial to later-period large-scale preparation, and the prepared quantum dots not only improvethe luminous efficiency, but also are more beneficial to growth of a thick shell layer.

The invention belongs to the technical field of nano materials, and particularly relates to quantum dots and a preparation method thereof. The preparation method comprises the following steps: providing a group III cationic precursor and a ligand, wherein the group III cationic precursor comprises one or more metal oxide precursors and/or one or more metal hydroxide precursors; dissolving the group III cationic precursor and the ligand in a solvent, and carrying out heating treatment under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution toa second temperature, then adding a group V anion precursor into the mixed solution, and carrying out a nucleation reaction to obtain a group III-V quantum dot nuclear solution. The preparation methodis stable in technology, simple in process, low in cost and beneficial to later-period large-scale preparation, and the prepared quantum dots are more beneficial to growth of the thick shell layer.

The invention discloses a GaN film growing on a Zr substrate. The GaN film sequentially comprises the Zr substrate and a GaN film part from the bottom up, wherein the GaN film part is a GaN film part growing at 500-700 DEG C. The invention further discloses a preparation method and an application of the GaN film growing on the Zr substrate. The GaN film growing on the Zr substrate has the advantages of low dislocation density and good crystal quality; the Zr substrate is easy to obtain and low in price; and the production cost can be lowered.

The invention belongs to the technical field of menthol purification, and particularly relates to a menthol purification method which comprises the following steps: preparing a composite solution froma composite solvent and a menthol raw material, and assisting ultrasonic treatment in the crystallization process, wherein a plurality of crystallization processes are adopted, so that the purification degree of menthol can be improved. Compared with the prior art, the method has the following advantages that: by reasonably preparing the solvent and cooperating with the effect of an ultrasonic generator, the properties of a crystal growth interface can be affected, the size and structural form of growth elements of crystals can be effectively controlled, then the nucleation time can be shortened, the menthol purity can be improved, the optical rotation can be improved, and it shows that the content of L-menthol is increased, and the quality of menthol crystals is greatly improved.