47results about How to "Reduced nucleation time" patented technology

The invention discloses a long-chain branched polylactic resin and a preparation method and an application thereof, which belong to the technical field of high polymer materials and are used for overcoming the defects of low strength, difficulty in foaming, poor blow molding property and high cost existing in the conventional linear polylactic resin melt. The long-chain branched polylactic resin is formed by linearly connecting a multi-arm polylactic acid through a coupling chain segment or connecting a multi-arm polylactic acid with 3-8 multi-arm polylactic acids through a coupling segment; each arm of each multi-arm polylactic acid is of the same length; the polymerization degree of each arm is 50-100 counted by a lactide unit; the arm quantity N of the multi-arm polylactic resin is 3, 4, 6 or 8; and the coupling chain segment has a polyurethane structure. The invention further provides a long-chain branched polylactic resin and a preparation method and an application thereof. The long-chain branched polylactic resin can be directly used for foaming, can be blended with a linear polylactic acid, shows melt viscosity frequency dependency likewise, has remarkable shearing thinning behavior and tensile stress hardening phenomenon, and can be used for preparing a foaming material at a lower cost.

The invention discloses a preparation process of ceramsite with high strength and hydrophobicity. The preparation process comprises the steps of raw material preparation, raw material drying, grinding, primary stirring and secondary stirring and auxiliary material adding. The preparation process has the beneficial effects that the grain rolling time is lengthened by firstly nucleating coarse powder and then adding fine powder in the granulation process; the product properties are improved through multiple times of different-temperature firing processes; the aim of waste utilization is achieved; auxiliary materials MnO2 and TiO2 in different ratios are added and are respectively used in the coarse material and the fine material so as to improve the properties of the ceramsite, such as strength; hydrophobic process treatment is also adopted, thus obviously reducing the water absorption of the ceramsite; multiple times of different degrees of firing processes are respectively adopted in the firing process to improve the sintering strength and properties; and the preparation process has the effect of increasing the density, strength and hydrophobicity of the ceramsite and is smooth in spherical grain surfaces and quite good in effects.

Disclosed is a hydrate kinetic inhibitor of a structural formula as represented by formula I. The inhibitor has a good water solubility, a high inhibitory activity, a capability of achieving a good inhibitory effect, a small usage amount and a reduced cost; has the advantages of a low dosage, a high efficiency, an extensive applicability, etc.; can effectively delay the hydrate nucleation time and reduce the hydrate generation rate in an environment of a high degree of undercooling at a low dosage concentration (0.1-10 wt%); is suitable for an oil-gas-water three-phase or oil-water or gas-water two-phase coexistence system; is applied to the inhibition of the generation of hydrates during the exploration, processing and transportation of oil and gas, without subjecting to undercooling and application constraints; and has a broad prospect of application. In formula I, R is *(CH2)m*, m = 1-5, and n = 10-10000.

The invention discloses an electrical pulse treatment method for improving chalking resistance of an aluminum ferro silicon manganese alloy. The mass percentage of each chemical component in the aluminum ferro silicon manganese alloy is that 49-51% of Mn, 19-21% of Al, 17-20% of Si, 5-14% of Fe and the balance of impurity elements such as carbon. The alloy preparation process comprises the following steps of (1) weighing each raw material according to designed components; (2) adding each raw material to be smelted according to a designed sequence; (3) when all raw materials are melted, switching off an induction furnace power supply; and meanwhile, inserting two pure ferro electrodes connected with an electrical pulse power supply into a high temperature molten pool; and applying high-energy density pulse current to the interior of the molten pool; and (4) after 5-10 minutes of electrical pulse treatment, cooling the molten pool to obtain the aluminum ferro silicon manganese alloy. Theproduct obtained by the electrical pulse treatment method for improving the chalking resistance of the aluminum ferro silicon manganese alloy has the advantages of smaller grain size, compact alloy structure, stable structure, excellent chalking resistance and long alloy storage period. Requirements of a deoxidizing agent for steel making are met.

The invention provides a method of synthesizing IM-5 molecular sieve by using a composite template. The method comprises the following steps: (1) dissolving an inorganic base, an aluminum source and two templates in deionized water and carrying out uniform mixing so as to prepare a mixed solution; (2) adding a silicon source into the mixed solution obtained in step (1), optionally adding an additive and carrying out uniform mixing so as to prepare colloid or a solid-liquid mixture; (3) transferring the colloid or the solid-liquid mixture obtained in step (2) to a crystallization kettle, carrying out hydrothermal crystallization at a temperature of 120 to 200 DEG C for 1 to 10 d, carrying out cooling after crystallization and rinsing, filtering and drying the obtained mixed liquor so as to obtain raw powder of the IM-5 molecular sieve. A mole ratio of reactants satisfies the equation of SiO2: Al2O3: M2O: R1: R2: H2O = 60: 0.4-6: 6-21: 0.6-18: 0.6-12: 300-1800, wherein M2O is an alkali metal oxide, R1 is a first template, and R2 is a second template. The method provided in the invention widens the range of mixing ratios of raw materials, improves yield of a single kettle and enables time for crystallization to be further shortened and enlarged production to be easier.

Disclosed is a hydrate kinetic inhibitor of a structural formula as represented by formula I. The inhibitor of the present invention has a good water solubility, a high inhibitory activity, a capability of achieving a good inhibitory effect, a small usage amount and a reduced cost; has the advantages of a low dosage, a high efficiency, an extensive applicability, etc.; can be used in an environment of a high degree of undercooling at a low dosage concentration (0.1-10 wt%); can effectively delay the hydrate nucleation time and reduce the hydrate generation rate; is suitable for an oil-gas-water three-phase or oil-water or gas-water two-phase coexistence system; is applied to the inhibition of the generation of hydrates during the exploration, processing and transportation of oil and gas, without subjecting to undercooling and application constraints; and has a broad prospect of application. wherein n = 100-40000, R is *(CH2)m*, and m = 1-5.

The invention discloses an LED epitaxial wafer grown on a metal Al substrate, which comprises a metal Al substrate, the (111) crystal plane of the metal Al substrate as the epitaxial plane, and Al grown on the metal Al substrate. 2 o 3 The protective layer, and the crystal epitaxial orientation relationship is GaN(0001) / / Al 2 o 3 (0001) / / Al(111), in Al 2 o 3 U-GaN thin film layer, N-GaN thin film layer, InGaN / GaN multiple quantum well layer, and p-type GaN thin film grown from bottom to top on the protective layer. The invention improves the luminous efficiency of the LED by selecting a suitable crystal orientation and obtaining a high-quality GaN epitaxial thin film on the Al(111) substrate.

The invention relates to the technical field of semiconductor photovoltaic materials and semiconductor devices, and discloses a preparation method for micron-sized spherical CZTSSe monocrystalline particles. Metal simple substance powder, sulfide powder, selenide powder, elemental sulfur powder, elemental selenium powder, flux, Cu2ZnSnS4 nanoparticles and as the like are combined as reaction raw materials, and are ground and mixed according to the designed formula. The powder mixture is vacuum-encapsulated into a quartz reactor; the quartz reactor is kept at the temperature of 750 DEG C to 1000 DEG C for 48-120 hours, and then is quickly cooled to the room temperature; and samples are taken out, cleaned and dried to obtain the CZTSSe monocrystalline particles. The size of the prepared monocrystalline particles can be regulated and controlled by utilizing recrystallization temperature and time, and the components of the particles can be effectively regulated within a certain range through the molar ratio of the elements in a precursor. The prepared monocrystalline particles are uniform and controllable in size, and are better than the monocrystalline particles prepared by the traditional method in performance.

The invention discloses a Ti-Ga-Sb phase-change material, a phase-change memory and a preparation method of the Ti-Ga-Sb phase-change material, belonging to the field of phase-change storage materials, and the Ti-Ga-Sb phase-change material is Ti, Sb , the chemical formula of Ga element composition is Ti x Ga y Sb 100‑x‑y The material is obtained by using Sb as the base material and doping Ti and Ga into the base material; wherein, x and y are the percentages of atoms, and 0<x<50, 0<y<50, 0 <x+y<60. The Ti-Ga-Sb phase-change material of the present invention has a simple and convenient preparation method, and compared with traditional phase-change materials, the prepared Ti-Ga-Sb phase-change material has a smaller difference in phase-change density, and can While ensuring the thermal stability of phase change materials, the crystallization efficiency of phase change materials is greatly improved, the stability and accuracy of information data storage of phase change materials are guaranteed, the efficiency of information storage of phase change memory is improved, and the service life of phase change memory is extended. At the same time, the functionality of the phase change memory is greatly improved.