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Quantum dot and preparation method thereof

A technology of quantum dots and ions, applied in the field of quantum dots and their preparation, can solve the problems of low efficiency, wide peak width of quantum dots, and high cost

Inactive Publication Date: 2020-04-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a quantum dot and its preparation method, aiming to solve the problem of the wide peak width and low luminous efficiency of the existing quantum dots, the long time, high cost and high efficiency of the quantum dot preparation method. low technical issues

Method used

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preparation example Construction

[0021] On the one hand, an embodiment of the present invention provides a method for preparing quantum dots, which includes the following steps:

[0022] S001: Provide a group III cation precursor and a ligand, dissolve the group III cation precursor and ligand in a solvent, and perform heat treatment under a first temperature condition to obtain a mixed solution;

[0023] S002: Continue to heat up the mixed solution to a second temperature, and then add a group V anion precursor to the mixed solution to perform a nucleation reaction to obtain a group III-V quantum dot nucleus solution.

[0024] In the method for preparing quantum dots provided by the embodiments of the present invention, before the nucleation reaction, the group III cationic precursor and ligand are dissolved in a solvent and heated under the first temperature condition, which not only makes the ligand and group III The cations are fully coordinated to help the full reaction of the anions and cations, and can effect...

Embodiment 1-1

[0181] (1) Preparation of quantum dot core InP:Zn solution

[0182] At room temperature, add 0.2mmol indium chloride and 1mmol zinc acetate into a 50ml three-necked flask, then add 1ml oleic acid and 10ml octadecene. Evacuate at 80°C for 60mins under vacuum protection, and then discharge nitrogen at 140°C for 60mins under nitrogen atmosphere protection. The temperature was raised to 280° C., 0.15 mmol of tris(trimethylsilyl) phosphine was added, and the reaction was carried out for 2 minutes to obtain an InP:Zn quantum dot core solution.

[0183] (2) Synthesis of quantum dot shell ZnS coating the quantum dot core InP:Zn

[0184] At 300° C., 0.3 ml of octanethiol and 2 mmol of zinc oleate were added to the InP:Zn quantum dot core solution. After 60 minutes of reaction, InP / ZnS core-shell quantum dots are obtained.

Embodiment 1-2

[0186] (1) Preparation of quantum dot core InP:Zn solution

[0187] At room temperature, add 0.2mmol indium chloride and 1mmol zinc acetate into a 50ml three-necked flask, then add 1ml oleic acid and 10ml octadecene. Evacuate at 80°C for 60mins under vacuum protection, and then discharge nitrogen at 140°C for 60mins under nitrogen atmosphere protection. The temperature was raised to 280° C., 0.15 mmol of tris(trimethylsilyl) phosphine was added, and the reaction was carried out for 2 minutes to obtain an InP:Zn quantum dot core solution.

[0188] (2) Synthesis of quantum dot shell ZnSe / ZnS coated with the quantum dot core InP:Zn

[0189] At 300° C., 0.2 mmol of tributyl phosphine selenide was added to the InP:Zn quantum dot core solution. After reacting for 20 minutes, 0.2 ml of octyl mercaptan and 2 mmol of zinc oleate were added. After 40 minutes of reaction, InP / ZnSe / ZnS core-shell quantum dots are obtained.

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Abstract

The invention belongs to the technical field of nanomaterials, and particularly relates to a quantum dot and a preparation method thereof. The preparation method comprises the following steps: providing a group-III cationic precursor and a ligand, wherein the group-III cationic precursor comprises one or more metal acetylacetonate precursors and one or more metal halide precursors; dissolving theIII-group cationic precursor and the ligand in a solvent, and carrying out heat treatment under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution toa second temperature, then adding a V-group anionic precursor into the mixed solution, and carrying out a nucleation reaction to obtain a III-V-group quantum dot core solution. The preparation methodis stable in technology, simple in process, low in cost and beneficial for later large-scale preparation; and the prepared quantum dot has higher luminous efficiency and remarkably narrowed peak width.

Description

Technical field [0001] The invention belongs to the technical field of nano materials, and specifically relates to a quantum dot and a preparation method thereof. Background technique [0002] Quantum dots, also called semiconductor nanocrystals, have a particle radius close to or smaller than the exciton Bohr radius. Due to the existence of the "quantum size" effect, as the size of the quantum dots is further reduced, the continuous energy level structure will gradually change to a discrete and discontinuous energy level structure. After being excited by light of a certain wavelength of energy, the photons in the valence band that absorb a certain energy are excited to the conduction band, and the excited electrons will transition from the conduction band to the valence band, and release energy in the form of light, emitting a significant Fluorescence phenomenon. Therefore, by adjusting the size and chemical composition of quantum dots in a certain way, the emission spectrum c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/70C09K11/88B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/703C09K11/883
Inventor 聂志文杨一行
Owner TCL CORPORATION
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