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Epitaxial growth GaN thin film on metal Al substrate and preparation method of GaN thin film

An epitaxial growth and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as unstable chemical properties of Al substrates, affecting the quality of epitaxial film growth, and introducing large stress into epitaxial films. , to achieve the effect of improving internal quantum efficiency, shortening nucleation time, and excellent singleness

Active Publication Date: 2016-07-06
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, it is found that metal Al has its unique advantages as the substrate material of epitaxial nitride, but the Al substrate is chemically unstable. When the epitaxial temperature is higher than 700 ° C, the epitaxial nitride and the metal substrate will occur. Interfacial reactions seriously affect the quality of epitaxial film growth
Pioneering researcher and well-known scientist Akasaki et al. have tried to apply traditional MOCVD or MBE technology to directly epitaxially grow nitrides on substrate materials with variable chemical properties. At the same time, the thermal mismatch between the Al substrate and AlN and GaN is relatively large, and it is easy to introduce a large stress into the epitaxial film, thereby generating dislocations and cracks in the film and affecting the quality of the GaN film

Method used

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  • Epitaxial growth GaN thin film on metal Al substrate and preparation method of GaN thin film
  • Epitaxial growth GaN thin film on metal Al substrate and preparation method of GaN thin film
  • Epitaxial growth GaN thin film on metal Al substrate and preparation method of GaN thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] A GaN thin film 15 grown on a metal Al substrate 11 includes an Al substrate 11 , an AlN buffer layer 12 , a GaN buffer layer 13 , an amorphous AlN insertion layer 14 and a GaN thin film 15 .

[0046] The AlN buffer layer 12 is grown on the epitaxial surface of the (111) plane of the Al substrate 11, the GaN buffer layer 13 is epitaxially grown on the AlN buffer layer 12, the amorphous AlN insertion layer 14 is grown on the GaN buffer layer 13, and the GaN thin film 15 The epitaxial growth is on the amorphous AlN insertion layer 14; the thickness of the AlN buffer layer 12 is 50nm, and the thickness of the Al substrate 11 is 0.5mm; the crystal epitaxial orientation relationship between the AlN buffer layer 12 and the GaN thin film 15 is that GaN (0001) is parallel to AlN(0001) is parallel to Al(111).

[0047] The GaN thin film 15 epitaxially grown on the metal Al substrate 11 is prepared by the following steps:

[0048] 1) Substrate selection and treatment: select meta...

Embodiment 2

[0054] A GaN thin film 15 grown on a metal Al substrate 11 includes an Al substrate 11 , an AlN buffer layer 12 , a GaN buffer layer 13 , an amorphous AlN insertion layer 14 and a GaN thin film 15 .

[0055] The AlN buffer layer 12 is grown on the epitaxial surface of the (111) plane of the Al substrate 11, the GaN buffer layer 13 is epitaxially grown on the AlN buffer layer 12, the amorphous AlN insertion layer 14 is grown on the GaN buffer layer 13, and the GaN thin film 15 The epitaxial growth is on the amorphous AlN insertion layer 14; the thickness of the AlN buffer layer 12 is 100nm, and the thickness of the Al substrate 11 is 2mm; the crystal epitaxial relationship between the AlN buffer layer 12 and the GaN thin film 15 is that GaN (0001) is parallel to AlN (0001) is parallel to Al(111).

[0056] The GaN thin film 15 epitaxially grown on the metal Al substrate 11 is prepared by the following steps:

[0057] 1) Substrate selection and treatment: select metal Al as the ...

Embodiment 3

[0063] A GaN thin film 15 grown on a metal Al substrate 11 includes an Al substrate 11 , an AlN buffer layer 12 , a GaN buffer layer 13 , an amorphous AlN insertion layer 14 and a GaN thin film 15 .

[0064] The AlN buffer layer 12 is grown on the epitaxial surface of the (111) plane of the Al substrate 11, the GaN buffer layer 13 is epitaxially grown on the AlN buffer layer 12, the amorphous AlN insertion layer 14 is grown on the GaN buffer layer 13, and the GaN thin film 15 The epitaxial growth is on the amorphous AlN insertion layer 14; the thickness of the AlN buffer layer 12 is 80nm, and the thickness of the Al substrate 11 is 1mm; the crystal epitaxial relationship between the AlN buffer layer 12 and the GaN thin film 15 is that GaN (0001) is parallel to AlN (0001) is parallel to Al(111).

[0065] The GaN thin film 15 epitaxially grown on the metal Al substrate 11 is prepared by the following steps:

[0066] 1) Substrate selection and treatment: select metal Al as the s...

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Abstract

The invention provides an epitaxial growth GaN thin film on a metal Al substrate. The GaN thin film comprises an Al substrate, an AlN buffer layer, a GaN buffer layer, an amorphous AlN insertion layer and a GaN thin film layer, wherein the AlN buffer layer grows on the epitaxial surface of the Al substrate (111); the GaN buffer layer epitaxially grows on the AlN buffer layer; the amorphous AlN insertion layer grows on the GaN buffer layer; the GaN thin film layer epitaxially grows on the amorphous AlN insertion layer; and the crystal epitaxy orientation relationship between the AlN buffer layer and the GaN thin film layer is that GaN (0001) is parallel to AlN (0001) and parallel to Al (111). The high-quality GaN epitaxial thin film is obtained on the Al substrate (111) through selecting proper crystal orientation; and the efficiency of a nitride device is improved.

Description

technical field [0001] The invention relates to the technical field of film synthesis by metal-organic chemical vapor deposition, in particular to a GaN thin film epitaxially grown on a metal Al substrate and a preparation method thereof. Background technique [0002] Group III nitride GaN has extremely excellent properties in electricity, optics and acoustics, and has attracted extensive attention in recent years. GaN is a direct bandgap material with fast acoustic wave transmission, good chemical and thermal stability, high thermal conductivity, low thermal expansion coefficient, and high breakdown dielectric strength. It is an ideal material for manufacturing high-efficiency light-emitting diode (LED) devices. If LEDs are to be widely used on a large scale, it is necessary to further improve the luminous efficiency of LED chips. Although the luminous efficiency of LED has surpassed that of fluorescent lamps and incandescent lamps, the luminous efficiency of commercial LE...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/12H01L33/14H01L33/64H01L33/00H01L21/02
CPCH01L21/02425H01L21/02458H01L21/02505H01L21/0254H01L21/02631H01L33/007H01L33/02H01L33/025H01L33/12H01L33/14H01L33/641
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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