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GaN thin film growing on metal Al substrate and preparing method and application thereof

A substrate and metal technology, which is applied in the field of metal organic chemical vapor deposition method to synthesize films, can solve the problems affecting the growth of epitaxial thin films, difficulties in thin film epitaxy, unstable chemical properties of metal Al substrates, etc., so as to improve the internal quantum efficiency , the effect of shortening the nucleation time and excellent thermal conductivity

Active Publication Date: 2014-08-20
广州市众拓光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the metal Al substrate is chemically unstable. When the epitaxial temperature is higher than 700 °C, the interface reaction between the epitaxial nitride and the metal substrate will seriously affect the quality of the epitaxial film growth.
Pioneering researcher and well-known scientist Akasaki et al. have tried to apply traditional MOCVD or MBE technology to directly epitaxially grow nitrides on substrate materials with variable chemical properties. difficulty

Method used

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  • GaN thin film growing on metal Al substrate and preparing method and application thereof
  • GaN thin film growing on metal Al substrate and preparing method and application thereof
  • GaN thin film growing on metal Al substrate and preparing method and application thereof

Examples

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Embodiment 1

[0040] like figure 1 As shown, the GaN film grown on the metal Al substrate shown in the present invention includes an Al substrate 1, and the (111) plane of the Al substrate is the Al grown on the epitaxial surface. 2 o 3 protective layer 2 as well as the Al 2 o 3 GaN film layer 3 epitaxially grown on protective layer 2, wherein Al 2 o 3 The crystal epitaxial orientation relationship between protective layer 2 and GaN thin film layer 3 is GaN(0001) / / Al 2 o 3 (0001) / / Al(111); The GaN thin film grown on the metal Al substrate is prepared by the following method:

[0041] 1) Substrate treatment: select metal Al as the substrate, firstly polish the surface of the Al substrate with diamond slurry, observe the surface of the substrate with an optical microscope and when there is no scratch, then use the method of chemical mechanical polishing to polish the substrate Perform polishing treatment; then put the substrate into deionized water and ultrasonically clean it at room t...

Embodiment 2

[0045] The difference from Example 1 is that the GaN thin film is prepared by the following method:

[0046] 1) Substrate treatment: select metal Al as the substrate, firstly polish the surface of the Al substrate with diamond slurry, observe the surface of the substrate with an optical microscope and when there is no scratch, then use the method of chemical mechanical polishing to polish the substrate Perform polishing treatment; then put the substrate into deionized water and ultrasonically clean it at room temperature for 5 minutes to remove the dirt particles on the surface of the Al substrate, and then wash with hydrochloric acid, acetone, and ethanol in sequence to remove surface organic matter; the cleaned substrate is washed with high Blow dry with pure dry nitrogen; then place the substrate Al at a pressure of 2×10 -10 In the growth chamber of Torr’s UHV-PLD, bake at a high temperature of 550 ° C for 1 hour to remove pollutants on the substrate surface, and then air c...

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Abstract

The invention discloses a GaN thin film growing on a metal Al substrate and a preparing method and application thereof. The GaN thin film growing on the metal Al substrate comprises the Al substrate, an Al2O3 protecting layer growing on an epitaxy face which is a face (111) of the Al substrate and a GaN thin film layer growing on the Al2O3 protecting layer in an epitaxial mode. The crystal epitaxial orientation relationship of the Al2O3 protecting layer and the GaN thin film layer is GaN (0001) / / Al2O3 (0001) / / Al (111). Proper crystal orientation is selected, so that a high-quality GaN epitaxial thin film is obtained on the Al (111) substrate and is used for improving nitride device efficiency. The GaN thin film is mainly used as dielectric layer thin films of a sound wave resonator, a logic circuit, a light-emitting diode, an optoelectronic thin film device, a solar cell, a photodiode, a photoelectric detector, a laser device and the like.

Description

technical field [0001] The invention relates to the technical field of film synthesis by metal-organic chemical vapor deposition, in particular to a GaN film grown on a metal Al substrate and its preparation method and application. The invention is mainly used in acoustic wave resonators, logic circuits, light-emitting diodes, Photoelectric thin film devices, dielectric layer films of solar cells, photodiodes, photodetectors, lasers, etc. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L33/00H01L33/02H01L31/18H01L31/0248
CPCH01L21/02425H01L21/02488H01L21/0254H01L21/0262H01L29/06H01L31/03044H01L31/1852H01L31/1856H01L33/0066H01L33/0075H01L33/32Y02E10/544
Inventor 李国强
Owner 广州市众拓光电科技有限公司
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