A kind of LED epitaxial wafer grown on Si substrate and preparation method thereof

Abstract

The invention discloses a light-emitting diode (LED) epitaxial wafer growing on an Si substrate. The LED epitaxial wafer comprises the Si substrate, an AlN nucleating layer, an AlxGa<1-x>N stepping buffer layer, an AlN / GaN stress compensation layer, an Si doped b-GaN layer, an InyGa<1-y>N / GaN quantum well layer, an AlzGa<1-z>N electronic barrier layer and an Mg doped p-GaN layer, wherein the AlN nucleating layer, the AlxGa<1-x>N stepping buffer layer, the AlN / GaN stress compensation layer, the Si doped b-GaN layer, the InyGa<1-y>N / GaN quantum well layer, the AlzGa<1-z>N electronic barrier layer and the Mg doped p-GaN layer sequentially grow on the Si substrate. According to the LED epitaxial wafer growing on the Si substrate, by means of the structure, the quantum well layer, the electronic barrier layer, and the p-type -GaN layer are subjected to epitaxial growth, the condition that cracks are not produced during an epitaxy temperature reduction process is guaranteed, a high-quality GaN thin film is subjected to epitaxy on the Si substrate, defect concentration is reduced, and internal quantum efficiency of an LED is improved.

Description

technical field [0001] The invention relates to an LED epitaxial wafer, in particular to an LED epitaxial wafer grown on a Si substrate and a preparation method thereof. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lighting, the application of LED light-...

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Problems solved by technology

However, the huge lattice mismatch with GaN (16.9%) will generate a large number of threading dislocations during the growth process, reducing the crystal quality of the GaN layer, and the existence of threading dislocations will lead to defect recombination, thereby reducing the LED The internal quantum efficiency greatly hinders the improvement of LED luminous efficiency.

In addition, the huge thermal mismatch (54%) will introduce tensile force during the cooling process and cause cracks on the GaN surface, which restricts the fabrication of LED devices

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