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Thin film and array substrate preparation method and array substrate

A thin-film preparation and array substrate technology, which is applied in semiconductor/solid-state device manufacturing, solid-state diffusion coating, coating, etc., can solve the problems of chamfering and residue caused by etching, and achieve the effect of improving adhesion

Inactive Publication Date: 2014-09-24
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the in-depth research on Cu materials, molybdenum alloy materials such as Mo, MoW, and MoTa have been developed and applied to the manufacture of Cu wiring, but the two generations of buffer layers have a common problem, that is, the etching of Cu thin films. In the process, because the corrosion potential of Cu and Mo alloys is different, etching is prone to problems such as chamfering or residue

Method used

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  • Thin film and array substrate preparation method and array substrate
  • Thin film and array substrate preparation method and array substrate
  • Thin film and array substrate preparation method and array substrate

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Embodiment 1

[0035] Such as figure 1 As shown, the present invention provides a thin film preparation method, including step 21 of forming a first metal A thin film. Wherein, the first metal A is a metal with poor adhesion, such as metal copper Cu. In particular, on the array substrate, for the wiring formed by the first metal A, such as: gate line, data line, gate electrode, source electrode and drain electrode, there is a problem of poor contact adhesion with the base substrate and the semiconductor layer. question.

[0036] In order to solve the above technical problems, the present invention also includes before the step 21 of forming the first metal A thin film:

[0037] Step 20 of forming an ABOx thin film, the ABOx thin film is disposed in contact with the first metal A thin film. Among them, B is the second metal of the second period to the fourth period of the second main group, and O is oxygen. In the film-forming process of the alloy of the first metal A and the second metal ...

Embodiment 2

[0047] The present invention also provides a method for preparing an array substrate. Since the array substrate includes the first metal A wiring, the preparation method includes the step of preparing the first metal A thin film, and then performing a patterning process on the first metal A thin film , forming the required metal wiring. For the thin film transistor array substrate, the first metal A wiring includes a gate line, a data line, a gate electrode, a source electrode and a drain electrode.

[0048]Before the step of forming the first metal A thin film, it also includes the step of forming an ABOx thin film, the ABOx thin film is arranged in contact with the first metal A thin film, wherein, B is the second period to the fourth period of the second main group the second metal, O is oxygen, and the ABOx thin film is formed by passing an oxygen-containing gas in the film-forming process of the alloy of the first metal A and the second metal B. Since the alloy oxide of ...

Embodiment 3

[0065] The present invention also provides an array substrate, which includes the pattern of the first metal A thin film, and also includes the pattern of the ABOx thin film corresponding to the position of the first metal A thin film pattern and arranged in contact, wherein, B is the pattern of the second main group For the second metal in the second period to the fourth period, O is oxygen, and the ABOx thin film is located between the first metal A thin film and the base substrate, or between the first metal A thin film and the semiconductor layer.

[0066] Due to the dense structure of ABOx, it has better adhesion, which greatly improves the adhesion of the first metal A. At the same time, since the ABOx film contains the first metal A, the corrosion potential of the first metal A film and the ABOx film are the same, so that there will be no problems such as chamfering or residue caused by different corrosion potentials in the etching process.

[0067] Specifically, the se...

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Abstract

The invention relates to the technical field of thin film preparation, and discloses a thin film and array substrate preparation method and an array substrate. For a first metal A thin film with small adhesive force, the method includes the step of forming a thin film ABOx before forming the first metal A thin film, wherein the thin film ABOx is prepared by injecting oxygen-bearing gas in the film forming process of alloy of first metal A and second metal B, the second metal B is active metal, within the range from the second period to the fourth period, of the second main group, can be easily combined with oxygen and oxygenized to form dense alloy oxide, and has large adhesive force, and adhesive force of the first metal A is greatly improved. Meanwhile, the thin film ABOx contains the first metal A, and therefore the first metal A thin film and the thin film ABOx have the same corrosion potential, and chamfers or residues or the like caused by the corrosion potential difference can not exist in the etching process.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a method for preparing a thin film, an array substrate, and an array substrate. Background technique [0002] In the display field, with the increasing popularity of large-size and high-frequency products, low-resistance copper (Cu) wiring technology has attracted more and more attention. However, the Cu thin film has the problem of poor contact adhesion with glass and semiconductor layers. Therefore, it is necessary to use a metal layer that is in good contact with glass and semiconductor layers as a buffer layer before making Cu wiring. [0003] Various panel manufacturers have developed Cu technology, and initially used Ti or MoTi as a buffer material. With the deepening of research on Cu materials, molybdenum alloy materials such as Mo, MoW, and MoTa have been developed and applied to the manufacture of Cu wiring, but the two generations of buffer layers have a...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L27/12H01L29/45H01L29/49
CPCH01L21/28008H01L21/76841H01L27/124H01L29/45H01L29/4908H01L29/495H01L29/458H01L29/66765H01L29/66969H01L29/7869C23C8/12H01L29/786C23C30/00
Inventor 姚琪张锋曹占锋李正亮
Owner BOE TECH GRP CO LTD