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A p-n type bi 2 o 3 /bipo 4 Heterojunction visible light responsive photocatalytic thin film material and preparation method thereof

A thin film material, visible light technology, applied in the field of photocatalytic materials, can solve problems such as reducing the degree of electron-hole recombination

Inactive Publication Date: 2016-06-08
ZHEJIANG GONGSHANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the great difference in energy band and structure between semiconductors, only two photocatalytic materials with matching valence band and conduction band positions can generate electrons and holes at high speed under the irradiation of a responsive light source. Transfer, minimize the degree of electron-hole recombination, it is possible to obtain materials with better photocatalytic effect

Method used

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  • A p-n type bi <sub>2</sub> o <sub>3</sub> /bipo <sub>4</sub> Heterojunction visible light responsive photocatalytic thin film material and preparation method thereof
  • A p-n type bi <sub>2</sub> o <sub>3</sub> /bipo <sub>4</sub> Heterojunction visible light responsive photocatalytic thin film material and preparation method thereof
  • A p-n type bi <sub>2</sub> o <sub>3</sub> /bipo <sub>4</sub> Heterojunction visible light responsive photocatalytic thin film material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0058] The FTO with a size of 10 mm × 50 mm × 2 mm was ultrasonically cleaned with acetone, absolute ethanol and deionized water for 5 minutes in sequence, and then it was taken out to dry and placed flat for use.

[0059] (1) BiPO 4 Preparation of powder: 5ml containing 2mmol of Bi(NO 3 ) 3 with 2mmolNH 4 h 2 PO 4 The ethylene glycol solution was dissolved in 65 ml of distilled water. A homogeneous solution A was formed by magnetic stirring, and placed in air for 12h. After precipitation, cleaning, drying, calcination at 900°C for 2 hours, and grinding, the white BiPO 4 powder.

[0060] (2) Precursor BiPO 4 Preparation of thin film: mix 12mgKI with 48mgBiPO 4 The powder was dissolved in 30ml of acetone, and after stirring and ultrasonication, a uniform colloidal solution B was formed as the electrolyte solution. After the conductive substrate was cleaned and dried, it was used as the cathode and the anode respectively, and electrophoretic deposition was carried out ...

Embodiment 2

[0072] Repeat the operation steps of embodiment 1, difference is that Bi 2 o 3 / BiPO 4 The electrodeposition time in solution C was reduced to 5 min during the preparation of the thin film.

[0073] Bi prepared under the conditions of this example 2 o 3 / BiPO 4 The RhB decolorization rate of the film was 60%.

Embodiment 3

[0075] Repeat the operation steps of embodiment 1, difference is that Bi 2 o 3 / BiPO 4 The electrodeposition time in solution C was reduced to 1 min during the film preparation.

[0076] Bi prepared under the conditions of this example 2 o 3 / BiPO 4 The RhB decolorization rate of the film was 20%.

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Abstract

The invention discloses a p-n type Bi 2 o 3 / BiPO 4 Heterojunction visible light-responsive photocatalytic thin film material and preparation method thereof, will contain Bi 3+ with PO 4 3- The ethylene glycol solution is dissolved in water, and white BiPO is obtained after precipitation, washing, drying, constant temperature calcination and grinding. 4 powder; mix KI with white BiPO 4 The powder was dissolved in acetone to obtain an electrolyte solution, and the conductive substrate was electrophoretically deposited in the electrolyte solution to obtain the precursor BiPO 4 Thin films; KI, Bi(NO 3 ) 3 and p-benzoquinone dissolved in water, adjust the pH to get Bi 2 o 3 electrodeposition solution; the precursor BiPO 4 Thin films, platinum sheets, Ag / AgCl electrodes and Bi 2 o 3 The electrodeposition solution is subjected to electrodeposition, dried and calcined. The composite photocatalyst of the invention exhibits higher photocatalytic activity and stability, and has better photoelectric catalytic degradation effect.

Description

technical field [0001] The invention relates to the technical field of photocatalytic materials, in particular to a p-n type Bi with high efficiency visible light response 2 o 3 / BiPO 4 Heterojunction photocatalytic thin film material and its preparation method. Background technique [0002] In today's society, when human beings are facing increasingly serious energy and environmental problems, photocatalytic technology has emerged as the times require, and has shown its superior application prospects. Many novel photocatalytic materials have been developed and exhibit high photocatalytic activity. However, the development of highly efficient and practically applicable photocatalytic materials is still a great challenge. Existing studies mostly use TiO 2 As a photocatalytic material, its wide band gap (3.2eV) and significant recombination of photogenerated electrons and holes lead to the use of limited ultraviolet light in solar energy. Therefore, the development of ne...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/186B01J35/10
Inventor 丛燕青金环王娟张轶王齐
Owner ZHEJIANG GONGSHANG UNIVERSITY
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