Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width

Abstract

Semiconductor devices having necked semiconductor bodies and methods of forming semiconductor bodies of varying width are described. For example, a semiconductor device includes a semiconductor body disposed above a substrate. A gate electrode stack is disposed over a portion of the semiconductor body to define a channel region in the semiconductor body under the gate electrode stack. Source and drain regions are defined in the semiconductor body on either side of the gate electrode stack. Sidewall spacers are disposed adjacent to the gate electrode stack and over only a portion of the source and drain regions. The portion of the source and drain regions under the sidewall spacers has a height and a width greater than a height and a width of the channel region of the semiconductor body.

Description

technical field [0001] Embodiments of the invention are in the field of semiconductor devices and processing, in particular, in the field of semiconductor devices having neck-shaped semiconductor bodies and methods of forming semiconductor bodies of different widths. Background technique [0002] Over the past few decades, the scaling of features in integrated circuits has been the driving force behind the growing semiconductor industry. Scaling to smaller and smaller features enables increasing the density of functional units on the limited real estate of a semiconductor chip. For example, shrinking transistor size allows the number of memory devices or logic devices to be included on a chip to increase, resulting in products with greater capacity. However, the quest for greater and greater capacity is not without its problems. The need to optimize the performance of each device has become increasingly apparent. [0003] In the fabrication of integrated circuit devices, ...

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Problems solved by technology

[0004] However, scaling multi-gate transistors is not in vain

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