Semiconductor device having a die and through substrate-via
A technology of semiconductors and devices, applied in the field of semiconductor devices with dies and through-substrate vias
Active Publication Date: 2014-12-03
MAXIM INTEGRATED PROD INC
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The bonding material allows for lateral expansion when the integrated circuit die is attached to the semiconductor wafer and during the bonding process
Method used
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[0011] review
[0012] Three-dimensional integrated circuit devices are typically fabricated using die-on-wafer technology, in which electronic components (eg, circuits) are first fabricated on two or more semiconductor wafers. The individual dies are then aligned and attached to the semiconductor wafer and singulated to provide individual devices. Through-substrate vias (TSVs) are built into the wafer prior to attachment, or formed in the wafer stack after attachment. However, fabricating three-dimensional integrated circuit devices requires additional fabrication steps to bond the die and wafer together. This increases the cost of the device. Also, each additional manufacturing step increases the risk of inducing defects, which can reduce device yields.
[0013] Accordingly, the described techniques fabricate semiconductor devices having multiple stacked dies (eg, semiconductor wafers) on a substrate in a reliable, production-worthy manner. In one or more implementatio...
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Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a semiconductor wafer and an integrated circuit die bonded together with an adhesive material. The semiconductor wafer and the integrated circuit die include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the semiconductor wafer and an integrated circuit die. A via is formed through the semiconductor wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the semiconductor wafer and the integrated circuits formed in the integrated circuit die. The via includes a conductive material that furnishes the electrical interconnection between the semiconductor wafer and the integrated circuit die.
Description
[0001] Cross References to Related Applications [0002] This application claims the benefit of priority under 35 U.S.C. §119(e) to U.S. Provisional Patent Application Serial No. 61 / 783486, filed March 14, 2013, and entitled "SEMICONDUCTOR DEVICE HAVING A DIE AND THROUH-SUBSTRATE VIA". The entire contents of US Provisional Patent Application Serial No. 61 / 783486 are incorporated herein by reference. Background technique [0003] Consumer electronic devices, especially mobile electronic devices such as smartphones, tablet computers, etc., are increasingly adopting smaller and more compact components to provide desired features to their users. These devices typically employ three-dimensional integrated circuit devices (3D ICs). Three-dimensional integrated circuit devices are semiconductor devices that employ two or more layers of active electronic components. Through-substrate via (TSV) devices interconnect electronic components on different layers (eg, different substrates)...
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IPC IPC(8): H01L27/04H01L23/52
CPCH01L23/5384H01L2924/0002H01L24/18H01L23/3128H01L23/49811H01L2224/92144H01L23/13H01L23/147H01L21/486H01L21/568H01L23/5389H01L23/544H01L2223/54426H01L2223/54453H01L2223/5448H01L2924/1305H01L2924/13055H01L2924/13091H01L25/0657H01L2924/181H01L2224/04105H01L2224/12105H01L24/24H01L24/82H01L2924/00H01L21/30604H01L21/6835H01L23/53238H01L23/564H01L24/32H01L24/83H01L2221/68372H01L2224/32146H01L2224/8385
Inventor X·应A·V·萨莫伊洛夫P·麦克纳利T·帕伦特
Owner MAXIM INTEGRATED PROD INC