Reliability test system and test method for millimeter wave monolithic circuit chip

Abstract

The invention discloses a reliability test system and a test method for a millimeter-wave monolithic circuit chip, and relates to the technical field of devices or methods for measuring electrical variables. The system includes an on-chip test module and a DC feed module, the on-chip test module includes a monolithic circuit tungsten copper carrier, four first filter capacitors and four second filter capacitors; the DC feed module includes Copper support, four side copper sheets, and four feedthrough capacitors. The system is based on a conventional test fixture, and an on-chip test module of a single-chip circuit chip is designed and produced. Using this module, the microwave test can be performed on the single-chip circuit chip before and after the reliability test. It has the advantages of low cost, easy implementation, and convenient use. specialty.

Description

technical field [0001] The present invention relates to the technical field of devices or methods for measuring electrical variables, in particular to a reliability testing system and testing method for a millimeter-wave monolithic circuit chip. Background technique [0002] Millimeter-wave monolithic circuit chips can be produced based on semiconductor materials. In order to verify the reliability of millimeter-wave monolithic circuit chips, tests such as high-temperature reverse bias and power aging are required. The DC and microwave parameters of the monolithic circuit chip need to be tested before and after the experiment. [0003] The single-chip circuit chip is in the form of a bare chip, which cannot directly carry out high-temperature reverse bias and power aging experiments. It needs to be assembled in the fixture to carry out the reliability test. Before and after the test, use the DC and microwave measurement system to test the single-chip circuit chip assembled in...

AI Technical Summary

Problems solved by technology

For the millimeter-wave single-chip circuit chip, if the frequency is as high as 90GHz, because the insertion loss of the test fixture is too large, only the DC test of the fixture can be performed, and the microwave test of the fixture cannot be performed, and the microwave test can only be performed by the bare chip on-chip test method. Bare Die Assembled in Fixture

In the conventional method, the on-chip test module cannot be disassembled. Because the test module has a certain thickness and the back is not flat, it is not easy to fix when it is placed on the platform of the on-chip microwave test system, and the side wall of the module will affect the microwave test probe, causing the on-chip The test is very difficult. At the same time, due to the small area of ​​the filter capacitor and the distance from the monolithic circuit chip, it is impossible to place the DC probe. The microwave test can only be carried out on the DC pressure point of the chip. After the bonding gold wire is removed, a part of the gold wire will be left, which will seriously affect the test results at high frequencies, and the test data will have large errors.

Therefore, conventional methods cannot be used for on-chip microwave testing after high temperature reverse bias and power aging experiments

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