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Method for testing thermal resistance of Schottky diode by using reverse characteristics

A technology of Schottky diodes and reverse characteristics, which is applied in the direction of diode testing and single semiconductor device testing, etc. It can solve the problems of lack of test conditions and thermal resistance testing can not be easily realized, and achieve test cost reduction, easy implementation, and connection The effect of simple structure

Pending Publication Date: 2020-09-22
山东宝乘电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0020] Using the above thermal voltage method to test the thermal resistance of diodes is a common method in the industry at present, but the completion of the above test process requires the use of complex special instruments (especially special instruments that can quickly reduce the heating current to the test current to obtain the thermal voltage) , generally small and medium-sized enterprises do not have this test condition, which is why the thermal resistance test cannot be implemented as easily as determining other ratings

Method used

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  • Method for testing thermal resistance of Schottky diode by using reverse characteristics
  • Method for testing thermal resistance of Schottky diode by using reverse characteristics
  • Method for testing thermal resistance of Schottky diode by using reverse characteristics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] Test sample model: Schottky rectifier diode DSS16;

[0077] Test conditions: the ambient temperature is T a = R at 100°C ja test;

[0078] A known:

[0079] Sample Quantity: 5 Package Type: SOD-123FL

[0080] Chip size: 32mil Breakdown voltage: V B >60V

[0081] All I in this test R Test voltage: V R =48V

[0082] Test steps:

[0083] Step 1: Determine the thermal calibration curve and perform an unbiased test:

[0084] I R1 @T j1 =T a1 =75℃,@V R = 48V. (Oven temperature 75°C, reverse current at 48V)

[0085] I R2 @T j2 =T a2 =100°C, @V R = 48V. (Oven temperature 100°C, reverse current at 48V)

[0086] Step 2: Do a biased test: I R2B @T a2 =100°C, @Bias =48V, @V R = 48V. (In order to compare with the current value I R2 To distinguish, here is the current under the bias voltage with I R2B Indicates that the bias voltage and test voltage here are both 48V)

[0087] Step 3: Calculate T 0 , I R0 .

[0088] Step 4: Calculate T j ,P R , R ja ...

Embodiment 2

[0092] Test sample model: Schottky rectifier diode DSS14;

[0093] Test conditions: the ambient temperature is T a = R at 100°C ja test;

[0094] A known:

[0095] Sample Quantity: 5 Package Type: SOD-123FL

[0096] Chip size: 28mil Breakdown voltage: V B >40V

[0097] All I in this test R Test voltage: V R =32V

[0098] Test steps:

[0099] Step 1: Determine the thermal calibration curve and perform an unbiased test:

[0100] I R1 @T j1 =T a1 =75℃,@V R = 32V. (Oven temperature 75°C, reverse current at 32V)

[0101] I R2 @T j2 =T a2 =100°C, @V R = 32V. (Oven temperature 100°C, reverse current at 32V)

[0102] Step 2: Do a biased test: I R2B @T a2 =100°C, @Bias =32V, @V R = 32V. (In order to compare with the current value I under 100°C and 32V conditions in the above unbiased test R2 To distinguish, here is the current under the bias voltage with I R2B Indicates that the bias voltage and test voltage here are both 32V)

[0103] Step 3: Calculate T 0...

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Abstract

The invention relates to a method for testing the thermal resistance of a Schottky diode by using reverse characteristics. Different from an existing test method in which a thermosensitive voltage isused as a thermosensitive parameter to represent junction temperature, the method provided by the invention selects reverse current IR of a Schottky chip under specified reverse voltage as the thermosensitive parameter, and determines a thermosensitive correction curve during a thermal resistance test by utilizing an exponential function relationship between reverse current of a Schottky diode andthe junction temperature, and then reverse current testing is carried out on the Schottky diode under the steady-state bias voltage, so the junction temperature, the reverse power consumption and thethermal resistance value of the Schottky diode are calculated. The method is advantaged in that by adopting the thermal resistance test method provided by the invention, the special test device doesnot need to be configured, the test device used in the whole test process is a conventional test instrument, a connection structure of the test system is very simple and easy to realize, the test of the thermal resistance of the Schottky diode can be easily realized for small and medium-sized enterprises without special test device, and test cost is reduced.

Description

technical field [0001] The invention relates to the testing of characteristic parameters of semiconductor power devices, in particular to a method for testing the thermal resistance of Schottky diodes by using reverse characteristics. Background technique [0002] Thermal resistance is an important thermal parameter to measure the heat dissipation ability of a diode. Its physical meaning can be compared to a resistor, which limits or hinders the flow of current in a circuit. Thermal resistance limits the flow or transfer of thermal energy in the device. [0003] The power consumption of the diode itself will be completely converted into heat during operation. This heat is emitted from the chip inside and increases the temperature of the chip. The higher the temperature of the chip, the more unstable the operation and the greater the risk of damage. Therefore, the current through the diode is usually limited according to the ambient temperature of the diode, and the working ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2632
Inventor 王永恒王卿璞任丕尧保爱林顾在意郭庆磊
Owner 山东宝乘电子有限公司
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