Semiconductor device and semiconductor device manufacturing method

Abstract

Provided are a semiconductor device wherein heat dissipating characteristics are excellent, reliability is high, and an increase of process cost load is suppressed, and a semiconductor device manufacturing method. A semiconductor device (1) is provided with an insulating substrate (12), semiconductor elements (13, 14), and a cooler (20). The cooler (20) has: a heat dissipating substrate (21) bonded to the insulating substrate (12); a plurality of fins (22) which are provided on the heat dissipating substrate (21) surface on the reverse side of the surface bonded to the insulating substrate (12); and a case (23), which houses the fins (22), and which is provided with an introducing port and a discharge port for a cooling liquid. An end portion of the heat dissipating substrate (21) is disposed in a cutout (23k) that is provided in an upper end portion of a side wall (23b) of the case (23), and the heat dissipating substrate (21) and the case (23) are bonded to each other in a liquid-tight state.

Description

technical field [0001] The present invention relates to a semiconductor device including a cooler for cooling a semiconductor element and a method of manufacturing the semiconductor device. Background technique [0002] In equipment using electric motors such as hybrid vehicles and electric vehicles, power conversion devices are used for energy saving. In this power conversion device, semiconductor modules are widely used. Such a semiconductor module constituting a control device for energy saving includes a power semiconductor element that controls a large current. General power semiconductor elements generate heat when controlling large currents, and the amount of heat generated increases with the miniaturization and higher output of power conversion devices. Therefore, a method of cooling a semiconductor module including a plurality of power semiconductor elements becomes a big problem. [0003] Conventionally, a liquid-cooled cooler is used as a cooler attached to the...

AI Technical Summary

Problems solved by technology

However, since the difference in linear expansion coefficient between the ceramic material of the insulating substrate and the base material of the heat dissipation substrate is large, the heat generated in the power semiconductor element deforms the heat dissipation substrate

Therefore, in the semiconductor device with the above-mentioned structure, if the overall thickness of the heat dissipation substrate is reduced, there will be problems such as that the heat dissipation substrate is deformed due to the influence of the difference in linear expansion coefficient, thereby causing the joint portion of the insulating substrate and the heat dissipation substrate to be damaged. reduced reliability

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