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Thin body switch transistor

A body, semiconductor technology for integrated recessed thin body field effect transistors and their fabrication that addresses performance degradation, switching speed and RF power processing slowdowns

Inactive Publication Date: 2014-12-31
格芯公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in known FET applications, as the voltage across the body or gate itself increases, Coff also increases significantly, thus degrading performance such as switching speed and RF power handling

Method used

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Embodiment Construction

[0013] The present invention relates to semiconductor structures, and more particularly to an integrated recessed thin body FET and method of fabrication thereof. More precisely, the structure of the present invention is an nFET formed in a recessed portion of silicon-on-insulator (SOI) for forming a thin body SOI nFET. In an embodiment, thin body SOI nFETs can be integrated into existing technologies such as to silicon thickness). In a more specific embodiment, the thin body SOI nFET can have about or less silicon thickness (Tsi). The minimum achievable thickness is limited by the oxidation furnace control and the mechanical stress state in the resulting thin body.

[0014] Advantageously, implementing a FET with an ultra-thin body provides a fully depleted SOI region, which in turn leads to faster switching speeds. Furthermore, the FETs of the present invention provide improved isolation, Coff and Coff(V) compared to conventional thicker SOI devices. Furthermore, RF...

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PUM

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Abstract

An integrated recessed thin body field effect transistor (FET) and methods of manufacture are disclosed. The method includes recessing a portion of a semiconductor material. The method further includes forming at least one gate structure within the recessed portion of the semiconductor material.

Description

technical field [0001] The present invention relates to semiconductor structures, and more particularly to integrated recessed thin body field effect transistors (FETs) and methods of fabrication thereof. Background technique [0002] Integrated circuits are used in many applications, including cellular telephones, computers, and many other electronic devices. For example, in cellular telephone applications, integrated circuits and more specifically field effect transistors (FETs) are used as switches. Such switches require high switching speeds with reduced Coff characteristics. As the size of such FET switches continues to decrease, there is a need to maintain or even increase their performance while maintaining low power requirements. [0003] The switching speed of a FET device is determined by the time required for charge carriers to move through a semiconductor region (eg, a channel region). Typical values ​​in power devices are about 20 to 200 picoseconds, dependin...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336
CPCH01L21/28026H01L29/0684H01L29/78654H01L21/84H01L21/28123H01L29/66613
Inventor M·J·阿鲍-科哈利尔A·B·伯塔拉M·D·贾菲A·J·乔瑟夫J·A·斯林克曼
Owner 格芯公司