Glass compound for semiconductor junction protection, manufacturing method of semiconductor device, and semiconductor device
A glass composite, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to achieve the effect of reducing the firing temperature
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Embodiment approach 1
[0094] Embodiment 1 is an embodiment related to the glass compound for semiconductor junction protection. In particular, an embodiment including a glass compound for protecting a semiconductor junction according to Examples 3 to 6 described later.
[0095] The glass compound for protecting a semiconductor junction according to Embodiment 1 is a glass compound for protecting a semiconductor junction used for forming a glass layer for protecting a pn junction in a semiconductor element having a pn junction exposed portion in which a pn junction is exposed, and is composed of a The glass granules are formed without fillers and are produced from a melt obtained by melting a glass raw material. The glass raw material contains at least ZnO, SiO in the following content 2 , B 2 o 3 , Al 2 o 3 , and oxides of at least two alkaline earth metals among BaO, CaO, and MgO, and ZrO 2 and nickel oxide, and substantially free of Pb, As, Sb, Li, Na, K,
[0096] ZnO: 30mol% ~ 60mol%;
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Embodiment approach 2
[0126] Embodiment 2 is an embodiment related to the glass compound for semiconductor junction protection. In particular, it is an embodiment including the glass compound for protecting a semiconductor junction according to Example 1 described later.
[0127] The glass compound for protecting a semiconductor junction according to the second embodiment basically contains the same components as the glass compound for protecting a semiconductor junction according to the first embodiment, but is different from the semiconductor junction according to the first embodiment in that it does not contain nickel oxide. The protective glass compound is different. That is, the glass compound for protecting a semiconductor junction according to the second embodiment basically contains the same components as the glass compound for protecting a semiconductor junction according to the first embodiment, and is a glass compound for protecting a semiconductor junction made of glass particles. And ...
Embodiment approach 3
[0141] Embodiment 3 is an embodiment related to a glass compound for semiconductor junction protection.
[0142] The glass compound for protecting a semiconductor joint according to the third embodiment basically contains the same components as the glass compound for protecting a semiconductor joint according to the first embodiment, but does not contain ZrO 2 This point is different from the glass compound for semiconductor junction protection concerning Embodiment 1. That is, the glass compound for protecting a semiconductor joint according to Embodiment 2 is a glass compound for protecting a semiconductor joint that is composed of glass particles obtained by melting a glass raw material and does not contain a filler. Liquid production, the glass raw material contains at least ZnO, SiO 2 , B 2 o 3 , Al 2 o 3 , and oxides of at least two alkaline earth metals in BaO, CaO and MgO, nickel oxide, and substantially free of Pb, As, Sb, Li, Na, K.
[0143] In the glass compou...
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Abstract
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