Semiconductor structure for suppressing harmonic effect and method for forming a structure for suppressing harmonic effect

Abstract

The invention provides a harmonic effect inhibiting semiconductor structure and a method for forming the same. The semiconductor structure comprises a semiconductor substrate, a device, deep trenches, a silicon layer and a dielectric layer. The semiconductor substrate comprises the components of: a semiconductor substrate base, an embedded dielectric layer, a surface semiconductor layer and a shallow-trench insulating layer in the surface semiconductor layer. The device is arranged on the surface semiconductor layer. The deep trenches are next to the device and extent to the semiconductor substrate base through the shallow-trench insulating layer and the embedded dielectric layer. The silicon layer is arranged at the lower part of the deep trench. The height of the silicon layer is same with or smaller than the height of the top surface of the semiconductor substrate base. The dielectric layer is arranged on the silicon layer in the deep trench. According to the method for forming the harmonic effect inhibiting structure, the semiconductor substrate can be etched before or after formation of an interlayer dielectric layer, thereby forming the deep trenches, and forming the silicon layer in the deep trenches. Carriers or charges can be attracted or captured through the silicon layer, thereby alleviating parasitic surface charges and inhibiting the harmonic effect.

Description

technical field [0001] The invention relates to a semiconductor technology, in particular to a technology for suppressing harmonic effects in semiconductor structures. Background technique [0002] In radio frequency (radio frequency (RF)) IC applications, such as RF switch devices or power amplifier devices, the performance is affected by parasitic surface charges. Harmonic effects are generated due to parasitic surface charges, thereby affecting device performance. Several wafer fabrication techniques are used to solve this problem, such as using a semiconductor-on-insulator (SOI) wafer to isolate the charge from the high resistance wafer substrate. However, when the RF frequency is selected at a higher frequency, it is more sensitive to the RF harmonic effect induced by parasitic surface charges. This problem needs to be solved urgently. Contents of the invention [0003] It is an object of the present invention to provide a semiconductor structure capable of suppres...

AI Technical Summary

Problems solved by technology

However, when the RF frequency is selected at a higher frequency, it is more sensitive to the RF harmonic effect induced by parasitic surface charges

Images