Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for measuring information about distribution of stress of 6H-SiC material along surface normal

A technology of surface normal and distribution information, applied in the field of microelectronics, can solve the problem that the x-ray diffractometer cannot obtain information about the distribution of stress along the surface normal

Active Publication Date: 2015-01-28
XIDIAN UNIV
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method for measuring the stress distribution information of 6H-SiC material along the surface normal, so as to solve the problem that the prior art cannot use x-ray diffractometer to obtain the information of stress distribution along the surface normal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for measuring information about distribution of stress of 6H-SiC material along surface normal
  • Method for measuring information about distribution of stress of 6H-SiC material along surface normal
  • Method for measuring information about distribution of stress of 6H-SiC material along surface normal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1, under the stress-free state The interplanar spacing of the crystal plane is used as a reference, and the (0002) in-plane stress component of the 6H-SiC material distributed along the surface normal and the stress component in the c-axis direction Take measurements.

[0026] Step 1, select a high-resolution x-ray diffractometer as the equipment used for the measurement, the x-ray diffractometer is provided with an x-ray source, an x-ray detector, a vacuum pump and a stage, the stage is provided with three The rotation axes are respectively ω-axis, χ-axis and φ-axis, wherein the ω-axis is parallel to the stage and perpendicular to the plane formed by the x-ray incident beam and the x-ray detector, and the χ-axis is parallel to the stage and The ω axis is vertical, and the φ axis is perpendicular to the stage; the detector can rotate around the 2θ axis that coincides with the ω axis. This example uses but is not limited to the Bruker D8Discover system eq...

Embodiment 2

[0054] Example 2, obtained under oblique symmetric diffraction The interplanar spacing of the crystal plane is used as a reference, and the (0002) in-plane stress component of the 6H-SiC material distributed along the surface normal and the stress component in the c-axis direction Take measurements.

[0055] Step A is the same as Step 1 of Example 1.

[0056] Step B is the same as Step 2 of Example 1.

[0057] Step C, aligning the (0002) crystal plane in the 6H-SiC material.

[0058] The specific implementation of this step is the same as that of step 3 in Embodiment 1.

[0059] Step D, for the 6H-SiC material The crystal face is aligned to the light.

[0060] The specific implementation of this step is the same as step 4 of Embodiment 1.

[0061] Step E, obtaining different x-ray transmission depths The Bragg angle of the crystal plane.

[0062] refer to figure 2 The given x-ray penetration depth varies with the φ-axis rotation angle. The x-ray penetration dep...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for measuring information about distribution of stress of a 6H-SiC material along surface normal. The method comprises the following technical steps: horizontally placing the 6H-SiC material on an object stage of an x-ray diffractometer; sequentially performing focusing on a crystal face (0002) and another crystal face shown in the specification in the 6H-SiC material; lowering the transmission depth of an x ray by virtue of step length being not less than 50nm, and acquiring Bragg angles of the crystal face shown in the specification in the presence of different transmission depth; substituting a group of measured Bragg angles into a Bragg equation to obtain the spacing of one group of crystal faces shown in the specification; and calculating the information about distribution of stress of the 6H-SiC material along surface normal according to the group of spacing. The method has the advantages of being low in measurement cost and avoiding damage to measured materials, and can be used for precisely analyzing a mechanism of influencing material crystallization quality by stress so as to improve the material crystallization quality.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a measurement method for semiconductor materials, in particular to a method for measuring the stress distribution information of a 6H-SiC material along a surface normal, which can be used to analyze the stress of the 6H-SiC material. technical background [0002] As one of the main representatives of the third-generation semiconductor materials, SiC is widely used in high-frequency, high-power and high-temperature electronic devices due to its wide bandgap, high electron mobility, high thermal conductivity, radiation resistance, and corrosion resistance. SiC materials have many kinds of crystal structures, among which 6H-SiC is a very important material with hexagonal structure. The device structure of 6H-SiC generally requires doping, and doping will inevitably introduce stress to the crystal lattice of the 6H-SiC material, thereby affecting the crystallization quality of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N23/20
Inventor 张金风聂玉虎张鹏蒋仁渊郝跃
Owner XIDIAN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com